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7 nm lithography process

The 7 nanometer (7 nm) lithography process is a technology node semiconductor manufacturing process following the 10 nm process node. The term "7 nm" is simply a commercial name for a generation of a certain size and its technology and does not represent any geometry of a transistor. Commercial mass production of integrated circuit using 7 nm process is set to begin sometimes in 2019 or 2020. This technology will be replaced by 5 nm process around 2022.

Industry[edit]

Only four semiconductor foundries are able to develop the advanced 7nm: Intel, Samsung, TSMC, and GlobalFoundries.

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Process Name
1st Production
Lithography Lithography
Immersion
Exposure
Wafer Type
Size
Transistor Type
Voltage
 
Fin Pitch
Width
Height
Gate Length (Lg)
Contacted Gate Pitch (CPP)
Minimum Metal Pitch (MMP)
SRAM bitcell High-Perf (HP)
High-Density (HD)
Low-Voltage (LV)
DRAM bitcell eDRAM
Intel TSMC GlobalFoundries Samsung Common Platform Paper
P1276 (CPU), P1277 (SoC) 7FF, 7FF+
will use EUVL instead of immersion lithography
, 7HPC
  7LPE
7 nm Low Power Early
 
    2019 2019  
  193 nm 193 nm EUV EUV
  Yes Yes    
  LELELELE SAQP SE SE
Bulk Bulk Bulk Bulk Bulk
300 nm 300 nm 300 nm 300 nm 300 nm
  FinFET FinFET FinFET FinFet
  0.50 V 0.50 V    
Value 10 nm Δ Value 10 nm Δ Value 14 nm Δ Value 10 nm Δ Value 10 nm Δ
                   
                   
                   
                   
    54 nm 0.84x 56 nm 0.72x 54 nm 0.79x 48 nm 0.75x
    40 nm 0.95x 40 nm 0.63x 36 nm 0.7x 36 nm 0.75x
                   
    0.027 µm² 0.64x 0.0269 µm² 0.34x 0.0260 µm² 0.65x    
                   
                   

Intel[edit]

On February 8 2017 Intel announced a $7B investment in Arizona's Fab 42 which will eventually produce chips on a 7 nm process. In May of 2017, Intel's Technology and Manufacturing Group Director, Mark Bohr, confirmed that Intel's 7 nm node has entered development phase and that the company's research focuses on the 5 nm and 3 nm nodes. Intel has been maintaining the details of their 7 nm node secrete for now. CEO Brian Krzanich mentioned a 2020 timeframe in an investor conference in June.

GlobalFoundries[edit]

On May 30 2017, GlobalFoundries Senior Vice President and head of CMOS Business Unit, Gregg Bartlett, announced their updated roadmap. Instead of EUV, the company will use multiple patterning 193i for their 7 nm node. The company is planning on first tape-out in the 2nd half of 2018 with mass production to begin in 2019. Bartlett noted that GF will switch to EUVL when it's ready.

TSMC[edit]

7nm tsmc.jpeg

In ISSCC 2017, the memory group at TSMC detailed their test 256 MiB SRAM chip which featured a 42.64 mm² die. The chip is manufactured on TSMC's 7nm HK-MG FinFET process using 4P4E LELELELE patterning technique. The over die is 0.34x smaller than their 16 nm process version. TSMC claims their 7nm proces will deliver a 20% performance improvement and a 40% reduction in power consumption.

The 7nm node will come in two variants, one optimized for mobile applications and a second one optimized for High performance applications. TSMC plans to introduce a second improved process called 7nm+ a year later, which will introduce some layers processed with EUVL. This will improve yields and reduce fab cycle times. The 7nm+ process will deliver improved power consumption and between 15-20% area scaling over their first generation 7nm process.

Samsung[edit]

Samsung will use EUVL for their 7nm node and thus will be the first to introduce this new technology after more than a decade of development. On May 24 2017, Samsung released a press release of their updated roadmap. Due to delays in the introduction of EUVL, Samsung will introduce a new process called 8nm LPP, to bridge the gap between 10nm and 7nm. The process will be manufactured without the use of EUVL and will feature a slightly relaxed transistor size.

7 nm Microprocessors[edit]

This list is incomplete; you can help by expanding it.

7 nm Microarchitectures[edit]

See also[edit]

References[edit]

  • Chang, Jonathan, et al. "12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-V MIN applications." Solid-State Circuits Conference (ISSCC), 2017 IEEE International. IEEE, 2017.
  • Standaert, T., et al. "BEOL process integration for the 7 nm technology node." Interconnect Technology Conference/Advanced Metallization Conference (IITC/AMC), 2016 IEEE International. IEEE, 2016.
  • Samsung/GlobalFoundries, IEEE International Electron Devices Meeting (IEDM) 2016