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180 nm lithography process

The 180 nanometer (180 nm) lithography process is a full node semiconductor manufacturing process following the 220 nm process stopgap. Commercial integrated circuit manufacturing using 180 nm process began in late 1998. This technology was replaced by with 150 nm process (HN) in 2000 and 130 nm process (FN) in 2001.

Industry[edit]

The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects.

Fab
Process Name​
1st Production​
Metal Layers​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel Fujitsu TSMC Motorola IBM NEC Samsung TI TI AMD
P858 CS-80 HiPerMOS 6 CMOS-8S3 C07a GS30
1999 2000 2000 2000 1998 2000 2001 2000 1999
7 6 6 7 7 6 5
Value 250 nm Δ Value 250 nm Δ Value 250 nm Δ Value 220 nm Δ Value 250 nm Δ Value 250 nm Δ Value 250 nm Δ Value 250 nm Δ Value 250 nm Δ Value 250 nm Δ
480 nm 0.96x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x
500 nm 0.82x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x
5.59 µm2 0.54x 4.18 µm2  ?x 4.65 µm2 0.62x  ? µm2  ?x  ? µm2  ?x  ? µm2  ?x  ? µm2  ?x  ? µm2  ?x  ? µm2  ?x  ? µm2  ?x

180 nm Microprocessors[edit]

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180 nm Microarchitectures[edit]

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