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22 nm lithography process

The 22 nanometer (22 nm) lithography process is a full node semiconductor manufacturing process following the 28 nm process stopgap. The term "22 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. Commercial integrated circuit manufacturing using 22 nm process began in 2008 for memory and 2012 for MPUs. This technology was replaced by with 20 nm process (HN) in 2014 and 16 nm process (FN) in late 2015.

Industry[edit]

The 22 nm became Intel's first generation of Tri-gate FinFET transistors and the first such transistor on the market. This process became 3rd generation high-k + metal gate transistors for Intel. In 2017 Intel announce the introduction of a new process "22FFL" specifically for low power IOT and mobile products for their custom foundry.

Fab
Process Name​
1st Production​
Transistor​
Wafer​
 ​
Fin Pitch​
Fin Width​
Fin Height​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell (HP)​
SRAM bit cell (HD)​
DRAM bit cell
Intel Common Platform
P1270 (CPU) / P1271 (SoC) 22FFL
FinFET Planar
2011 2017 2012
300 mm
Value 32 nm Δ Value 32 nm Δ Value 32 nm Δ
60 nm N/A 45 nm N/A N/A
8 nm  ? nm
34 nm  ? nm
90 nm 0.80x 108 nm 100 nm 0.79x
80 nm 0.71x 90 nm 80 nm  ?x
0.1080 µm² 0.63x  ? µm² 0.1 µm² 0.67x
0.092 µm²  ?x 0.88 µm²  ? µm²  ?x
0.026 µm² 0.67x

Intel[edit]

intel 22nm tri-gate transistors.png

Find models[edit]

Click to browse all 22 nm MPU models

22 nm Microprocessors[edit]

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Click to browse all 22 nm MPU models

22 nm Microarchitectures[edit]

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Documents[edit]