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28 nm lithography process

The 28 nanometer (28 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.

Industry[edit]

Fab
Wafer​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell (HD)​
SRAM bit cell (LP)​
SRAM bit cell (HC)
Samsung TSMC GlobalFoundries STMicroelectronics UMC
300mm
Value 40 nm Δ Value 40 nm Δ Value 40 nm Δ Value 40 nm Δ Value 40 nm Δ
90 nm 0.70x 117 nm 0.72x  ?nm  ?x  ?nm  ?x  ?nm  ?x
96 nm 0.82x  ?nm  ?x  ?nm  ?x  ?nm  ?x  ?nm  ?x
0.120 µm2  ?x 0.127 µm2 0.52x 0.120 µm2  ?x 0.120 µm2  ?x 0.124 µm2  ?x
0.155 µm2 0.197 µm2  ?x  ? µm2  ?x
0.152 µm2  ?x

28 nm Microprocessors[edit]

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28 nm Microarchitectures[edit]

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