Revision as of 19:47, 5 April 2017

Semiconductor lithography processes technology

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The 32 nanometer (32 nm) lithography process is a full node semiconductor manufacturing process following the 40 nm process stopgap. Commercial integrated circuit manufacturing using 32 nm process began in 2010. This technology was superseded by the 28 nm process (HN) / 22 nm process (FN) in 2012.

Industry

TSMC cancelled its planned 32nm node process. Intel's 32 nm process became the first process to introduce the self-aligned via patterning.

Design Rules

Intel 32nm Design Rules
Layer	Pitch	Thick	Aspect Ratio	Image
Isolation	140 nm	200	-
Contacted Gate	112.5 nm	35 nm	--
Metal 1	112.5 nm	95 nm	1.7
Metal 2	112.5 nm	95 nm	1.7
Metal 3	112.5 nm	95 nm	1.7
Metal 4	168.8 nm	151 nm	1.8
Metal 5	225.0 nm	204 nm	1.8
Metal 6	337.6 nm	303 nm	1.8
Metal 7	450.1 nm	388 nm	1.7
Metal 8	566.5 nm	504 nm	1.8
Metal 9	19.4 µm	8 µm	1.5

Find models

Click to browse all 32 nm MPU models

32 nm Microprocessors

• AMD
  • A8
  • A10
• Intel
  • Celeron
  • Core i3
  • Core i5
  • Core i7
  • Core i7EE
  • Xeon
  • Xeon E3
  • Xeon E5
  • Xeon E7
• UC Davis
  • KiloCore
• Princeton
  • Piton

This list is incomplete; you can help by expanding it.

32 nm Microarchitectures

• Intel
  • Saltwell
  • Sandy Bridge
  • Westmere
• AMD
  • Bulldozer
  • Piledriver

This list is incomplete; you can help by expanding it.

References

• Samsung foundry solution for 32 & 28 nm
• Diaz, C. H., et al. "32nm gate-first high-k/metal-gate technology for high performance low power applications." Electron Devices Meeting, 2008. IEDM 2008. IEEE International. IEEE, 2008.