The 45 nanometer (45 nm) lithography process is a full node semiconductor manufacturing process following the 55 nm process stopgap.
- Commercial integrated circuit manufacturing using 45 nm process began in 2007.
This technology was superseded by the 40 nm (HN) / 32 nm process (FN) in 2010.
Contents
[hide]Industry[edit]
In January of 2006 Intel announced that they've been able to fabricate the first fully functional SRAM chips on a 45 nm process. As a preview Intel showcased 45 nm SRAM chip (shown below) packing more than 1 billion transistors. Intel opened 3 45 nm facilities, their initial D1D facility in Oregon, Fab 32 in Arizona and Fab 28 in Israel. Intel's 45 nm process is the first time high-k + metal gate transistors was used in high-volume manufacturing process.
Intel 45 nm Design Rules | |||
---|---|---|---|
Layer | Pitch | Thick | Aspect Ratio |
Isolation | 200 nm | 200 nm | - |
Contacted Gate |
180 nm | 60 nm | -- |
Metal 1 | 160 nm | 144 nm | 1.8 |
Metal 2 | 160 nm | 144 nm | 1.8 |
Metal 3 | 160 nm | 144 nm | 1.8 |
Metal 4 | 240 nm | 216 nm | 1.8 |
Metal 5 | 280 nm | 252 nm | 1.8 |
Metal 6 | 360 nm | 324 nm | 1.8 |
Metal 7 | 560 nm | 504 nm | 1.7 |
Metal 8 | 810 nm | 720 nm | 1.8 |
Metal 9 | 30.5 µm | 7 µm | 0.4 |
Specifications[edit]
Fab / Manuf |
---|
Process Name |
1st Production |
Type |
Wafer |
|
Contacted Gate Pitch |
Interconnect Pitch (M1P) |
SRAM bit cell (HD) |
SRAM bit cell (LP) |
DRAM bit cell |
Intel | Fujitsu | TI | Toshiba / Sony / NEC |
Samsung | IBM / Toshiba / Sony / AMD | ||||||
---|---|---|---|---|---|---|---|---|---|---|---|
P1266 (CPU) / P1269 (SoC) / P1266.8 (SoC) |
CS-300 | 11LP | |||||||||
2006 | 2008 | 2008 | 2006 | 2007 | 2007 | ||||||
Bulk | PDSOI | ||||||||||
300mm | |||||||||||
Value | 65 nm Δ | Value | 65 nm Δ | Value | 65 nm Δ | Value | 65 nm Δ | Value | 65 nm Δ | Value | 65 nm Δ |
180 nm | 0.82x | 190 nm | ?x | ? nm | ?x | 180 nm | ?x | ? nm | ?x | 190 nm | 0.76x |
160 nm | 0.76x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x |
0.346 µm² | 0.61x | 0.225 µm² | ?x | 0.255 µm² | ?x | 0.248 µm² | ?x | 0.29 µm² | 0.54x | 0.370 µm² | 0.57x |
0.3816 µm² | 0.56x | 0.359 µm² | 0.53x | ||||||||
0.11 µm² | 0.58x | 0.067 µm² | 0.53x |
Intel[edit]
45 nm Microprocessors[edit]
- AMD
- Freescale
- IBM
- Intel
This list is incomplete; you can help by expanding it.n Chips== This list is incomplete; you can help by expanding it.
45 nm Microarchitectures[edit]
This list is incomplete; you can help by expanding it.
Documents[edit]
References[edit]
- Mistry, Kaizad, et al. "A 45nm logic technology with high-k+ metal gate transistors, strained silicon, 9 Cu interconnect layers, 193nm dry patterning, and 100% Pb-free packaging." Electron Devices Meeting, 2007. IEDM 2007. IEEE International. IEEE, 2007.