Semiconductor & Computer Engineering
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Difference between revisions of "32 nm lithography process"
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|Contacted Gate Pitch | |Contacted Gate Pitch | ||
|Interconnect Pitch (M1P) | |Interconnect Pitch (M1P) | ||
| − | |SRAM bit cell | + | |SRAM bit cell (HD) |
| + | |SRAM bit cell (HS) | ||
| + | |SRAM bit cell (LV) | ||
|DRAM bit cell | |DRAM bit cell | ||
}} | }} | ||
| Line 33: | Line 35: | ||
| ? nm || ?x || 112.5 nm || 0.70x || ? nm || ?x || 113.4 nm || 0.97x || ? nm || ?x || ?nm || ?x | | ? nm || ?x || 112.5 nm || 0.70x || ? nm || ?x || 113.4 nm || 0.97x || ? nm || ?x || ?nm || ?x | ||
|- | |- | ||
| − | | 0.15 µm<sup>2</sup> || 0.41x || 0. | + | | 0.15 µm<sup>2</sup> || 0.41x || 0.148 µm<sup>2</sup> || 0.49x || 0.15 µm<sup>2</sup> || 0.62x || 0.120 µm<sup>2</sup> || ?x || 0.124 µm<sup>2</sup> || 0.64x || 0.157 µm<sup>2</sup> || 0.42x |
| + | |- | ||
| + | | || || 0.199 µm<sup>2</sup> || || || || || || || || || | ||
| + | |- | ||
| + | | || || 0.171 µm<sup>2</sup> || || || || || || || || || | ||
|- | |- | ||
| 0.039 µm<sup>2</sup> || 0.58x | | 0.039 µm<sup>2</sup> || 0.58x | ||
Revision as of 18:43, 30 November 2016
Semiconductor lithography processes technology
The 32 nanometer (32 nm) lithography process is a full node semiconductor manufacturing process following the 40 nm process stopgap. Commercial integrated circuit manufacturing using 32 nm process began in 2010. This technology was superseded by the 28 nm process (HN) / 22 nm process (FN) in 2012.
Contents
Industry
TSMC cancelled its planned 32nm node process.
| Fab |
|---|
| Process Name |
| 1st Production |
| Type |
| Wafer |
| |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell (HD) |
| SRAM bit cell (HS) |
| SRAM bit cell (LV) |
| DRAM bit cell |
| Common Platform | Intel | TSMC | Samsung | Toshiba / NEC | Common Platform 2 | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| P1268 | |||||||||||
| 2009 | 2009 | 2009 | 2009 | 2009 | 2010 | ||||||
| PDSOI | Bulk | ||||||||||
| 300mm | |||||||||||
| Value | 45 nm Δ | Value | 45 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ | Value | 45 nm Δ |
| 130 nm | 0.68x | 112.5 nm | 0.63x | 130 nm | 0.80x | 113.4 nm | 0.88x | 120 nm | 0.71x | 126 nm | 0.66x |
| ? nm | ?x | 112.5 nm | 0.70x | ? nm | ?x | 113.4 nm | 0.97x | ? nm | ?x | ?nm | ?x |
| 0.15 µm2 | 0.41x | 0.148 µm2 | 0.49x | 0.15 µm2 | 0.62x | 0.120 µm2 | ?x | 0.124 µm2 | 0.64x | 0.157 µm2 | 0.42x |
| 0.199 µm2 | |||||||||||
| 0.171 µm2 | |||||||||||
| 0.039 µm2 | 0.58x | ||||||||||
Design Rules
| Intel 32nm Design Rules | |||
|---|---|---|---|
| Layer | Pitch | Thick | Aspect Ratio |
| Isolation | 140 nm | 200 | - |
| Contacted Gate | 112.5 nm | 35 nm | -- |
| Metal 1 | 112.5 nm | 95 nm | 1.7 |
| Metal 2 | 112.5 nm | 95 nm | 1.7 |
| Metal 3 | 112.5 nm | 95 nm | 1.7 |
| Metal 4 | 168.8 nm | 151 nm | 1.8 |
| Metal 5 | 225.0 nm | 204 nm | 1.8 |
| Metal 6 | 337.6 nm | 303 nm | 1.8 |
| Metal 7 | 450.1 nm | 388 nm | 1.7 |
| Metal 8 | 566.5 nm | 504 nm | 1.8 |
| Metal 9 | 19.4 µm | 8 µm | 1.5 |
Find models
Click to browse all 32 nm MPU models
32 nm Microprocessors
- AMD
- Intel
- UC Davis
- Princeton
This list is incomplete; you can help by expanding it.
32 nm Microarchitectures
- Intel
- AMD
This list is incomplete; you can help by expanding it.