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{{lithography processes}}
 
{{lithography processes}}
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The '''180 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[220 nm lithography process|220 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 180 nm process began in late 1998. This technology was replaced by with [[150 nm lithography process|150 nm process]] (HN) in 2000 and [[130 nm lithography process|130 nm process]] (FN) in 2001.
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The '''180 nanometer (180 nm) lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[220 nm lithography process|220 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 180 nm process began in late 1998. This technology was replaced by with [[150 nm lithography process|150 nm process]] (HN) in 2000 and [[130 nm lithography process|130 nm process]] (FN) in 2001.
  
 
== Industry ==
 
== Industry ==
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The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects.
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=== Intel ===
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{{scrolling table/top|style=text-align: right; | first=Fab
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* 200mm (8-inch) wafers
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|Process Name
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{| class="wikitable"
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|1st Production
 +
|Wafer
 +
|Metal Layers
 +
| 
 +
|Contacted Gate Pitch
 +
|Interconnect Pitch (M1P)
 +
|SRAM bit cell
 +
}}
 +
{{scrolling table/mid}}
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|-
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! colspan="2" | [[Intel]] !! colspan="2" | [[Fujitsu]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[Motorola]] !! colspan="2" | [[IBM]] !! colspan="2" | [[NEC]] !! colspan="2" | [[Samsung]] !! colspan="2" | [[TI]] !! colspan="2" | [[TI]] !! colspan="2" | [[AMD]]
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|- style="text-align: center;"
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| colspan="2" | P858 || colspan="2" | CS-80 || colspan="2" |  || colspan="2" | HiPerMOS 6 || colspan="2" | CMOS-8S3 || colspan="2" |  || colspan="2" |  || colspan="2" | C07a || colspan="2" | GS30 || colspan="2" |
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|- style="text-align: center;"
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| colspan="2" | 1999 || colspan="2" | 2000 || colspan="2" | 2000 || colspan="2" | 2000 || colspan="2" | 1998 || colspan="2" | 2000 || colspan="2" | 2001 || colspan="2" |  || colspan="2" | 2000  || colspan="2" | 1999
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|- style="text-align: center;"
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| colspan="22" | 200 mm
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|- style="text-align: center;"
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| colspan="2" | 7 || colspan="2" | 6 || colspan="2" | 6 || colspan="2" | 7 || colspan="2" | 7 || colspan="2" |  || colspan="2" |  || colspan="2" | 6 || colspan="2" | 5 || colspan="2" |
 
|-
 
|-
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| || Measurement || Scaling from [[250 nm]]
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! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[220 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ
 
|-
 
|-
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| Contacted Gate Pitch || 480 nm ||  
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| 480 nm || 0.96x || ? nm || ?x || 430 nm || 0.67x || ? nm || ?x || 420 nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x
 
|-
 
|-
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| Interconnect Pitch (M1P) || 500 nm ||  
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| 500 nm || 0.82x || ? nm || ?x || 460 nm || 0.72x || ? nm || ?x || 440 nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x
 
|-
 
|-
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| [[SRAM]] bit cell || 5.59 µm<sup>2</sup> || .56x
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| 5.59 µm<sup>2</sup> || 0.54x || 4.18 µm<sup>2</sup> || ?x || 4.65 µm<sup>2</sup> || 0.62x || ? µm<sup>2</sup>  || ?x || ? µm<sup>2</sup>  || ?x || ? µm<sup>2</sup>  || ?x || ? µm<sup>2</sup>  || ?x || ? µm<sup>2</sup>  || ?x || ? µm<sup>2</sup>  || ?x || ? µm<sup>2</sup>  || ?x
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|}
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{{scrolling table/end}}
  
 
== 180 nm Microprocessors==
 
== 180 nm Microprocessors==
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* AMD
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{{collist
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| count = 4
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|
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* {{amd|K6-III}}
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* {{amd|K6-2+}}
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* {{amd|K6-III+}}
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* {{amd|Athlon}}
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* {{amd|Athlon 4}}
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* {{amd|Athlon MP}}
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* {{amd|Athlon XP}}
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* {{amd|Duron}}
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}}
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* Cyrix
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** {{cyrix|Cyrix III}}
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* DEC
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** {{decc|Alpha 21264C}}
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** {{decc|Alpha 21364}}
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** {{decc|Alpha 21264B}}
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* HAL (Fujitsu)
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** {{hal|SPARC64 GP}}
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* HiSilicon
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** {{hisil|K3}}
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* HP
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** {{hp|PA-8700}}
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** {{hp|PA-8700+}}
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* IBM
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** {{ibm|RS64 IV}}
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** {{ibm|z900}}
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* Intel
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** {{intel|Itanium}}
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** {{intel|Itanium 2}}
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** {{intel|Mobile Pentium III}}
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** {{intel|Pentium 4}}
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* Loongson
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** {{loongson|Godson 2}}
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* Motorola
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** {{motorola|PowerPC}}
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* Qualcomm
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** {{qualcomm|MSM6xxx}}
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* Rapport
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** {{rapport|Kilocore}} ({{cmu|PipeRench}})
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* Sun
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** {{sun|UltraSPARC IIi}}
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** {{sun|UltraSPARC IIe}}
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* STMicroelectronics
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** STM32 F0
 
{{expand list}}
 
{{expand list}}
  
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== 180 nm System on Chips==
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== 180 nm Microarchitectures ==
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* AMD
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** {{amd|K6-III|l=arch}}
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** {{amd|K7|l=arch}}
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* ARM
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** {{armh|ARM7|l=arch}}
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* IBM
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** {{ibm|z900|l=arch}}
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* Intel
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** {{intel|NetBurst|l=arch}}
 
{{expand list}}
 
{{expand list}}
  
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== 180 nm Microarchitectures ==
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[[category:lithography]]
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{{expand list}}
 

Latest revision as of 02:04, 17 August 2023

basic wafer drawing.svg Semiconductor lithography processes technology
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The 180 nanometer (180 nm) lithography process is a full node semiconductor manufacturing process following the 220 nm process stopgap. Commercial integrated circuit manufacturing using 180 nm process began in late 1998. This technology was replaced by with 150 nm process (HN) in 2000 and 130 nm process (FN) in 2001.

Industry[edit]

The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects.

Fab
Process Name​
1st Production​
Wafer​
Metal Layers​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel Fujitsu TSMC Motorola IBM NEC Samsung TI TI AMD
P858 CS-80 HiPerMOS 6 CMOS-8S3 C07a GS30
1999 2000 2000 2000 1998 2000 2001 2000 1999
200 mm
7 6 6 7 7 6 5
Value 250 nm Δ Value 250 nm Δ Value 250 nm Δ Value 220 nm Δ Value 250 nm Δ Value 250 nm Δ Value 250 nm Δ Value 250 nm Δ Value 250 nm Δ Value 250 nm Δ
480 nm 0.96x  ? nm  ?x 430 nm 0.67x  ? nm  ?x 420 nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x
500 nm 0.82x  ? nm  ?x 460 nm 0.72x  ? nm  ?x 440 nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x
5.59 µm2 0.54x 4.18 µm2  ?x 4.65 µm2 0.62x  ? µm2  ?x  ? µm2  ?x  ? µm2  ?x  ? µm2  ?x  ? µm2  ?x  ? µm2  ?x  ? µm2  ?x

180 nm Microprocessors[edit]

  • AMD

This list is incomplete; you can help by expanding it.

180 nm Microarchitectures[edit]

This list is incomplete; you can help by expanding it.

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