Semiconductor & Computer Engineering
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Difference between revisions of "28 nm lithography process"
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* Liang, C. W., et al. "A 28nm poly/SiON CMOS technology for low-power SoC applications." VLSI Technology (VLSIT), 2011 Symposium on. IEEE, 2011. | * Liang, C. W., et al. "A 28nm poly/SiON CMOS technology for low-power SoC applications." VLSI Technology (VLSIT), 2011 Symposium on. IEEE, 2011. | ||
* James, Dick. "High-k/metal gates in the 2010s." Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI. IEEE, 2014. | * James, Dick. "High-k/metal gates in the 2010s." Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI. IEEE, 2014. | ||
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Revision as of 05:45, 20 July 2018
Semiconductor lithography processes technology
The 28 nanometer (28 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.
Industry
| Process Name | |
|---|---|
| 1st Production | |
| Lithography | Lithography |
| Immersion | |
| Exposure | |
| Wafer | Type |
| Size | |
| Transistor | Type |
| Voltage | |
| Metal Layers | |
| Gate Length (Lg) | |
| Contacted Gate Pitch (CPP) | |
| Minimum Metal Pitch (MMP) | |
| SRAM bitcell | High-Perf (HP) |
| High-Density (HD) | |
| Low-Voltage (LV) | |
| DRAM bitcell | eDRAM |
| TSMC | Common Platform Alliance The Common Platform Alliance is a joint collaboration between IBM, Samsung, GlobalFoundries, Toshiba, NEC, STMicroelectronics, Infineon Technologies, Chartered Semiconductor Manufacturing, Renasas |
UMC | ||||
|---|---|---|---|---|---|---|
| 28LP, 28HPL, 28HP | 28LP, 28LPP, 28SLP | 28HPC, 28HLP, 28HPC+, 28µLP | ||||
| 4Q 2011 | 2014 | 2013 | ||||
| 193 nm | 193 nm | 193 nm | ||||
| Yes | Yes | Yes | ||||
| DP | DP | DP | ||||
| Bulk | Bulk | Bulk | ||||
| 300 mm | 300 mm | 300 mm | ||||
| Planar | Planar | Planar | ||||
| 1 V, 0.8 V | 1 V, 0.85 V | 0.9 V, 1.05 V, 0.7 V | ||||
| 10 | 10 | 10 | ||||
| Value | 32 nm Δ | Value | 32 nm Δ | Value | 40 nm Δ | |
| 24 nm | 28 nm | 33 nm | ||||
| 117 nm | 113.4 nm | 120 nm | ||||
| 90 nm | 90 nm | 90 nm | ||||
| 0.152 µm² | ||||||
| 0.127 µm² | 0.120 µm² | 0.124 µm² | ||||
| 0.155 µm² | 0.197 µm² | |||||
28 nm Microprocessors
- AMD
- HiSilicon
- Intel (Fab'ed by TSMC)
- MediaTek
- Phytium
- PEZY
- Renesas
- Xiaomi
This list is incomplete; you can help by expanding it.
28 nm Microarchitectures
- AMD
- ARM Holdings
- Nervana
- Movidius
- Phytium
- VIA Technologies
- Zhaoxin
This list is incomplete; you can help by expanding it.
References
- Samsung foundry solution for 32 & 28 nm
- Wu, Shien-Yang, et al. "A highly manufacturable 28nm cmos low power platform technology with fully functional 64mb sram using dual/tripe gate oxide process." VLSI Technology, 2009 Symposium on. IEEE, 2009.
- Shang, Huiling, et al. "High performance bulk planar 20nm CMOS technology for low power mobile applications." VLSI Technology (VLSIT), 2012 Symposium on. IEEE, 2012.
- Arnaud, F., et al. "Competitive and cost effective high-k based 28nm CMOS technology for low power applications." Electron Devices Meeting (IEDM), 2009 IEEE International. IEEE, 2009.
- Yuan, J., et al. "Performance elements for 28nm gate length bulk devices with gate first high-k metal gate." Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on. IEEE, 2010.
- Liang, C. W., et al. "A 28nm poly/SiON CMOS technology for low-power SoC applications." VLSI Technology (VLSIT), 2011 Symposium on. IEEE, 2011.
- James, Dick. "High-k/metal gates in the 2010s." Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI. IEEE, 2014.