Revision as of 13:01, 1 June 2017

Semiconductor lithography processes technology

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The 10 nanometer (10 nm) lithography process is a semiconductor manufacturing process node serving as shrink from the 14 nm process. The term "10 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. The 10 nm node is currently being introduced and is set to get replaced by the 7 nm process in 2019.

Industry

Announced during Intel's Technology and Manufacturing Day 2017, Intel's 10 nm process (P1274) is the first high-volume manufacturing process to employ Self-Aligned Quad Patterning (SAQP) with production starting in the second half of 2017. Intel detailed Hyper-Scaling, a marketing term for a suite of techniques used to scale a transistor, which included SAQP, a single dummy gate and contact over active gate (COAG). Samsung, which unlike Intel uses LELELE (litho-etch-litho-etch-litho-etch), plans ramp up mass production in May of 2017.

Due to marketing names the transistor sizes vary considerably between leading manufactures. For example, Intel's 10nm process is denser and smaller than TSMC's 7 nm process while Samsung's 10 nm process is more similar to Intel's 14 nm process.

Samsung

Samsung demonstrated their 128 Mebibit SRAM wafer from their 10nm FinFET process. ChipWorks/TechInsight measured the CPP/MMP which came a little short of the Common Platform Alliance Paper which was presented in 2016, at 68 mm contacted gate pitch, 51 nm metal pitch, dual STI, and had single dummy gate.

Samsung 128 Mib SRAM demo 10 nm wafer
Technology 10nm FinFET Supply voltage 1.8 V (i/o) Bit cell size 0.040 µm² macro configs 256x512 Kib Capacity 128 Mib Test Features Programmable E-fuse Die Size 75.6mm²

10 nm Microprocessors

• MediaTek
  • Helio
• Qualcomm
  • Snapdragon 800
  • Centriq
• Xiaomi
  • Surge

This list is incomplete; you can help by expanding it.

10 nm Microarchitectures

• Intel
  • Cannonlake
  • Icelake
  • Tigerlake
• Qualcomm
  • Falkor

This list is incomplete; you can help by expanding it.

Documents

• Intel's 10 nm Technology: Delivering the Highest Logic Transistor Density in the Industry Through the Use of Hyper Scaling
• Intel Technoogy & Manufacturing Day presentation, 10 nm
• Intel Technoogy & Manufacturing Day presentation, 10 nm / Moore's Law

References

• Mark Bohr, Intel. Intel Technology and Manufacturing Day. Mar 28, 2017.
• Samsung uses LELELE based on their press release about their 10nm FinFET Technology on October 17, 2016.
• Seo, K-I., et al. "A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI." VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on. IEEE, 2014.
• Cho, H-J., et al. "Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications." VLSI Technology, 2016 IEEE Symposium on. IEEE, 2016.
• Song, Taejoong, et al. "A 10 nm FinFET 128 Mb SRAM With Assist Adjustment System for Power, Performance, and Area Optimization." IEEE Journal of Solid-State Circuits (2016).
• Clinton, Michael, et al. "12.3 A low-power and high-performance 10nm SRAM architecture for mobile applications." Solid-State Circuits Conference (ISSCC), 2017 IEEE International. IEEE, 2017.