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Difference between revisions of "28 nm lithography process"

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{{lithography processes}}
 
{{lithography processes}}
 
The '''28 nm lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[32 nm lithography process|32 nm]] and [[22 nm lithography process|22 nm]] processes. Commercial [[integrated circuit]] manufacturing using 28 nm process began in 2011. This technology superseded by commercial [[22 nm lithography process|22 nm process]].
 
The '''28 nm lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[32 nm lithography process|32 nm]] and [[22 nm lithography process|22 nm]] processes. Commercial [[integrated circuit]] manufacturing using 28 nm process began in 2011. This technology superseded by commercial [[22 nm lithography process|22 nm process]].
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== Industry ==
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=== Samsung ===
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{| class="wikitable"
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|-
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| || Measurement || Scaling from [[40 nm]]
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|-
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| Contacted Gate Pitch || 90 nm || 0.70x
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|-
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| Interconnect Pitch (M1P) || 96 nm || 0.82x
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|-
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| [[SRAM]] bit cell || 0.120 µm<sup>2</sup> || ?x
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|}
  
 
== 28 nm Microprocessors ==
 
== 28 nm Microprocessors ==

Revision as of 21:49, 23 April 2016

The 28 nm lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.

Industry

Samsung

Measurement Scaling from 40 nm
Contacted Gate Pitch 90 nm 0.70x
Interconnect Pitch (M1P) 96 nm 0.82x
SRAM bit cell 0.120 µm2  ?x

28 nm Microprocessors

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28 nm System on Chips

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