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Difference between revisions of "180 nm lithography process"
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Revision as of 21:43, 8 September 2016
The 180 nanometer (180 nm) lithography process is a full node semiconductor manufacturing process following the 220 nm process stopgap. Commercial integrated circuit manufacturing using 180 nm process began in late 1998. This technology was replaced by with 150 nm process (HN) in 2000 and 130 nm process (FN) in 2001.
Industry
The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects.
Fab |
---|
Process Name |
1st Production |
Metal Layers |
|
Contacted Gate Pitch |
Interconnect Pitch (M1P) |
SRAM bit cell |
Intel | Fujitsu | TSMC | Motorola | IBM | NEC | Samsung | TI | TI | AMD | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
P858 | CS-80 | HiPerMOS 6 | CMOS-8S3 | C07a | GS30 | ||||||||||||||
1999 | 2000 | 2000 | 2000 | 1998 | 2000 | 2001 | 2000 | 1999 | |||||||||||
7 | 6 | 6 | 7 | 7 | 6 | 5 | |||||||||||||
Value | 250 nm Δ | Value | 250 nm Δ | Value | 250 nm Δ | Value | 220 nm Δ | Value | 250 nm Δ | Value | 250 nm Δ | Value | 250 nm Δ | Value | 250 nm Δ | Value | 250 nm Δ | Value | 250 nm Δ |
480 nm | 0.96x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x |
500 nm | 0.82x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x |
5.59 µm2 | 0.54x | 4.18 µm2 | ?x | 4.65 | 0.62x | ? µm2 | ?x | ? µm2 | ?x | ? µm2 | ?x | ? µm2 | ?x | ? µm2 | ?x | ? µm2 | ?x | ? µm2 | ?x |
180 nm Microprocessors
- AMD
- Cyrix
- DEC
- HAL (Fujitsu)
- HP
- IBM
- Intel
- Motorola
- Rapport
- Sun
This list is incomplete; you can help by expanding it.
180 nm Microarchitectures
This list is incomplete; you can help by expanding it.