Semiconductor & Computer Engineering
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Difference between revisions of "180 nm lithography process"
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! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[220 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ | ! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[220 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ | ||
|- | |- | ||
| − | | 480 nm || 0.96x || ? nm || ?x || | + | | 480 nm || 0.96x || ? nm || ?x || 430 nm || 0.67x || ? nm || ?x || 420 nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x |
|- | |- | ||
| − | | 500 nm || 0.82x || ? nm || ?x || | + | | 500 nm || 0.82x || ? nm || ?x || 460 nm || 0.72x || ? nm || ?x || 440 nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x |
|- | |- | ||
| 5.59 µm<sup>2</sup> || 0.54x || 4.18 µm<sup>2</sup> || ?x || 4.65 µm<sup>2</sup> || 0.62x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x | | 5.59 µm<sup>2</sup> || 0.54x || 4.18 µm<sup>2</sup> || ?x || 4.65 µm<sup>2</sup> || 0.62x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x | ||
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** {{sun|UltraSPARC IIi}} | ** {{sun|UltraSPARC IIi}} | ||
** {{sun|UltraSPARC IIe}} | ** {{sun|UltraSPARC IIe}} | ||
| + | * STMicroelectronics | ||
| + | ** STM32 F0 | ||
{{expand list}} | {{expand list}} | ||
Latest revision as of 02:04, 17 August 2023
Semiconductor lithography processes technology
The 180 nanometer (180 nm) lithography process is a full node semiconductor manufacturing process following the 220 nm process stopgap. Commercial integrated circuit manufacturing using 180 nm process began in late 1998. This technology was replaced by with 150 nm process (HN) in 2000 and 130 nm process (FN) in 2001.
Industry[edit]
The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects.
| Fab |
|---|
| Process Name |
| 1st Production |
| Wafer |
| Metal Layers |
| |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell |
| Intel | Fujitsu | TSMC | Motorola | IBM | NEC | Samsung | TI | TI | AMD | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| P858 | CS-80 | HiPerMOS 6 | CMOS-8S3 | C07a | GS30 | ||||||||||||||||
| 1999 | 2000 | 2000 | 2000 | 1998 | 2000 | 2001 | 2000 | 1999 | |||||||||||||
| 200 mm | |||||||||||||||||||||
| 7 | 6 | 6 | 7 | 7 | 6 | 5 | |||||||||||||||
| Value | 250 nm Δ | Value | 250 nm Δ | Value | 250 nm Δ | Value | 220 nm Δ | Value | 250 nm Δ | Value | 250 nm Δ | Value | 250 nm Δ | Value | 250 nm Δ | Value | 250 nm Δ | Value | 250 nm Δ | ||
| 480 nm | 0.96x | ? nm | ?x | 430 nm | 0.67x | ? nm | ?x | 420 nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ||
| 500 nm | 0.82x | ? nm | ?x | 460 nm | 0.72x | ? nm | ?x | 440 nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ||
| 5.59 µm2 | 0.54x | 4.18 µm2 | ?x | 4.65 µm2 | 0.62x | ? µm2 | ?x | ? µm2 | ?x | ? µm2 | ?x | ? µm2 | ?x | ? µm2 | ?x | ? µm2 | ?x | ? µm2 | ?x | ||
180 nm Microprocessors[edit]
- AMD
- Cyrix
- DEC
- HAL (Fujitsu)
- HiSilicon
- HP
- IBM
- Intel
- Loongson
- Motorola
- Qualcomm
- Rapport
- Sun
- STMicroelectronics
- STM32 F0
This list is incomplete; you can help by expanding it.
180 nm Microarchitectures[edit]
This list is incomplete; you can help by expanding it.