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Difference between revisions of "32 nm lithography process"

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{{lithography processes}}
 
{{lithography processes}}
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The '''32 nanometer (32 nm) lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[40 nm lithography process|40 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 32 nm process began in 2010. This technology was superseded by the [[28 nm lithography process|28 nm process]] (HN) / [[22 nm lithography process|22 nm process]] (FN) in 2012.
+
The '''32 nanometer (32 nm) lithography process''' is a [[technology node|full node]] semiconductor manufacturing  
 +
:process following the [[40 nm lithography process|40 nm process]] stopgap.  
 +
Commercial [[integrated circuit]] manufacturing using 32 nm process began in 2010.  
 +
:This technology was superseded by the [[28 nm lithography process|28 nm process]] (HN) / [[22 nm lithography process|22 nm process]] (FN) in [[2012]].
  
 
== Industry ==
 
== Industry ==
−
TSMC cancelled its planned 32nm node process. Intel's 32 nm process became the first process to introduce the [[self-aligned via patterning]].
+
[[Intel]]'s 32 nm process became the first process to introduce the [[self-aligned via patterning]].
 +
:[[TSMC]] cancelled its planned [[32 nm]] node process.  
  
 +
=== Design Rules ===
 +
{| class="wikitable"
 +
|-
 +
! colspan="5" | [[Intel]] 32 nm Design Rules
 +
|-
 +
! Layer !! Pitch !! Thick !! Aspect<br>Ratio !! Image
 +
|-
 +
| Isolation || 140 nm || 200 || - || rowspan="12" | [[file:intel 32nm design rules.png|left|500px]]
 +
|-
 +
| Contacted <br>Gate ||  112.5 nm || 35 nm || --
 +
|-
 +
| Metal 1 || 112.5 nm || 95 nm || 1.7
 +
|-
 +
| Metal 2 || 112.5 nm || 95 nm || 1.7
 +
|-
 +
| Metal 3 || 112.5 nm || 95 nm || 1.7
 +
|-
 +
| Metal 4 || 168.8 nm || 151 nm || 1.8
 +
|-
 +
| Metal 5 || 225.0 nm || 204 nm || 1.8
 +
|-
 +
| Metal 6 || 337.6 nm || 303 nm || 1.8
 +
|-
 +
| Metal 7 || 450.1 nm || 388 nm || 1.7
 +
|-
 +
| Metal 8 || 566.5 nm || 504 nm || 1.8
 +
|-
 +
| Metal 9 || 19.4 µm || 8 µm || 1.5
 +
|-
 +
| Bump || 145.9 µm || 25.5 µm || -
 +
|-
 +
|}
 +
 +
== Specifications ==
 
{{nodes comp
 
{{nodes comp
 
<!-- Intel -->
 
<!-- Intel -->
 
  | process 1 fab          = [[Intel]]
 
  | process 1 fab          = [[Intel]]
−
  | process 1 name        = P1268 (CPU) / P1269 (SoC)
+
  | process 1 name        = P1268<!--(CPU)-->, P1269<!--(SoC)-->
 
  | process 1 date        = 2009
 
  | process 1 date        = 2009
 
  | process 1 lith        = 193 nm
 
  | process 1 lith        = 193 nm
Line 16: Line 54:
 
  | process 1 wafer size  = 300 mm
 
  | process 1 wafer size  = 300 mm
 
  | process 1 transistor  = Planar
 
  | process 1 transistor  = Planar
−
  | process 1 volt        = 1 V, 0.75 V
+
  | process 1 volt        = 1.0 V, 0.75 V
 
  | process 1 layers      = 9
 
  | process 1 layers      = 9
 
  | process 1 delta from  = [[45 nm]] Δ
 
  | process 1 delta from  = [[45 nm]] Δ
Line 36: Line 74:
 
  | process 2 fab          = [[TSMC]]
 
  | process 2 fab          = [[TSMC]]
 
  | process 2 name        = &nbsp;
 
  | process 2 name        = &nbsp;
−
  | process 2 date        = &nbsp;
+
  | process 2 date        = cancelled
 
  | process 2 lith        = 193 nm
 
  | process 2 lith        = 193 nm
 
  | process 2 immersion    = Yes
 
  | process 2 immersion    = Yes
 
  | process 2 exposure    = DP
 
  | process 2 exposure    = DP
 
  | process 2 wafer type  = Bulk
 
  | process 2 wafer type  = Bulk
−
  | process 2 wafer size  = 300 nm
+
  | process 2 wafer size  = 300 mm
 
  | process 2 transistor  = Planar
 
  | process 2 transistor  = Planar
 
  | process 2 volt        = 1.1 V
 
  | process 2 volt        = 1.1 V
Line 61: Line 99:
 
  | process 2 dram Δ      = &nbsp;
 
  | process 2 dram Δ      = &nbsp;
 
<!-- IBM -->
 
<!-- IBM -->
−
  | process 3 fab          = [[Common Platform Alliance]]<info>The Common Platform Alliance 20 nm node was a collaboration between [[IBM]], [[Samsung]], [[Freescale]], [[Toshiba]], [[Chartered Semiconductor Manufacturing]], [[Infineon Technologies ]]</info>
+
  | process 3 fab          = [[Samsung]] <info>[[Common Platform Alliance]] - The Common Platform Alliance 20 nm node was a collaboration between [[IBM]], [[Samsung]], [[Freescale]], [[Toshiba]], [[Chartered Semiconductor Manufacturing]], [[Infineon Technologies]]</info>
 
  | process 3 name        = &nbsp;
 
  | process 3 name        = &nbsp;
 
  | process 3 date        = 2011
 
  | process 3 date        = 2011
Line 68: Line 106:
 
  | process 3 exposure    = DP
 
  | process 3 exposure    = DP
 
  | process 3 wafer type  = Bulk
 
  | process 3 wafer type  = Bulk
−
  | process 3 wafer size  = 300 nm
+
  | process 3 wafer size  = 300 mm
 
  | process 3 transistor  = Planar
 
  | process 3 transistor  = Planar
−
  | process 3 volt        = 1 V, 0.8 V
+
  | process 3 volt        = 1.0 V, 0.8 V
 
  | process 3 layers      = 11
 
  | process 3 layers      = 11
 
  | process 3 delta from  = [[45 nm]] Δ
 
  | process 3 delta from  = [[45 nm]] Δ
Line 88: Line 126:
 
  | process 3 dram Δ      = &nbsp;
 
  | process 3 dram Δ      = &nbsp;
 
<!-- Toshiba -->
 
<!-- Toshiba -->
−
  | process 4 fab          = [[Toshiba]] / [[NEC]]
+
  | process 4 fab          = [[NEC]] <info>[[NEC]] - [[Toshiba]]</info>
 
  | process 4 name        = &nbsp;
 
  | process 4 name        = &nbsp;
 
  | process 4 date        = &nbsp;
 
  | process 4 date        = &nbsp;
Line 95: Line 133:
 
  | process 4 exposure    = DP
 
  | process 4 exposure    = DP
 
  | process 4 wafer type  = Bulk
 
  | process 4 wafer type  = Bulk
−
  | process 4 wafer size  = 300 nm
+
  | process 4 wafer size  = 300 mm
 
  | process 4 transistor  = Planar
 
  | process 4 transistor  = Planar
 
  | process 4 volt        = 1 V
 
  | process 4 volt        = 1 V
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  | process 4 dram Δ      = &nbsp;
 
  | process 4 dram Δ      = &nbsp;
 
<!-- IBM SOI -->
 
<!-- IBM SOI -->
−
  | process 5 fab          = [[Common Platform Alliance]] (SOI)<info>[[IBM]], [[Freescale]], [[AMD]]</info>
+
  | process 5 fab          = [[AMD]] <info>[[Common Platform Alliance]] (SOI) - [[AMD]], [[IBM]], [[Freescale]]</info>
 
  | process 5 name        = &nbsp;
 
  | process 5 name        = &nbsp;
 
  | process 5 date        = &nbsp;
 
  | process 5 date        = &nbsp;
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  | process 5 exposure    = DP
 
  | process 5 exposure    = DP
 
  | process 5 wafer type  = SOI
 
  | process 5 wafer type  = SOI
−
  | process 5 wafer size  = 300 nm
+
  | process 5 wafer size  = 300 mm
 
  | process 5 transistor  = Planar
 
  | process 5 transistor  = Planar
 
  | process 5 volt        = 1 V
 
  | process 5 volt        = 1 V
Line 139: Line 177:
 
  | process 5 sram lv      = &nbsp;
 
  | process 5 sram lv      = &nbsp;
 
  | process 5 sram lv Δ    = &nbsp;
 
  | process 5 sram lv Δ    = &nbsp;
−
  | process 5 dram        = 0.039 µm²
+
  | process 5 dram        = 0.039 <br>µm²
 
  | process 5 dram Δ      = &nbsp;
 
  | process 5 dram Δ      = &nbsp;
 
}}
 
}}
−
 
−
=== Design Rules ===
 
−
{| class="wikitable collapsible collapsed"
 
−
|-
 
−
! colspan="5" | Intel 32nm Design Rules
 
−
|-
 
−
! Layer !! Pitch !! Thick !! Aspect Ratio !! Image
 
−
|-
 
−
| Isolation || 140 nm || 200 || - || rowspan="12" | [[file:intel 32nm design rules.png|750px]]
 
−
|-
 
−
| Contacted Gate ||  112.5 nm || 35 nm || --
 
−
|-
 
−
| Metal 1 || 112.5 nm || 95 nm || 1.7
 
−
|-
 
−
| Metal 2 || 112.5 nm || 95 nm || 1.7
 
−
|-
 
−
| Metal 3 || 112.5 nm || 95 nm || 1.7
 
−
|-
 
−
| Metal 4 || 168.8 nm || 151 nm || 1.8
 
−
|-
 
−
| Metal 5 || 225.0 nm || 204 nm || 1.8
 
−
|-
 
−
| Metal 6 || 337.6 nm || 303 nm || 1.8
 
−
|-
 
−
| Metal 7 || 450.1 nm || 388 nm || 1.7
 
−
|-
 
−
| Metal 8 || 566.5 nm || 504 nm || 1.8
 
−
|-
 
−
| Metal 9 || 19.4 µm || 8 µm || 1.5
 
−
|-
 
−
| Bump || 145.9 µm || 25.5 µm || -
 
−
|}
 
  
 
== Find models ==
 
== Find models ==
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  | ?first launched
 
  | ?first launched
 
  | ?base frequency
 
  | ?base frequency
−
  | format=template|link=all|sort=name|order=asc|headers=hide|mainlabel=-|intro=<table class="wikitable"><tr><th colspan="8">[[32 nm]] Microprocessors</th></tr><tr><th colspan="3">Model</th><th colspan="5">Specs</th></tr><tr><th>Model</th><th>Family</th><th>µarch</th><th>Process</th><th>Designer</th><th>Manufacturer</th><th>Intro</th><th>Freq</th></tr>|outro=</table>|limit=0|searchlabel=Click to browse all 32 nm MPU models|sep=,|template=proc table 1|userparam=9
+
  | format=template |link=all |sort=name |order=asc |headers=hide |mainlabel=- |intro=<table class="wikitable"><tr><th colspan="8">[[32 nm]] Microprocessors</th></tr><tr><th colspan="3">Model</th><th colspan="5">Specs</th></tr><tr><th>Model</th><th>Family</th><th>µarch</th><th>Process</th><th>Designer</th><th>Manufacturer</th><th>Intro</th><th>Freq</th></tr> |outro=</table> |limit=0 |searchlabel=Click to browse all 32 nm MPU models |sep=, |template=proc table 1 |userparam=9  
 
}}
 
}}
  

Latest revision as of 21:10, 19 March 2025

basic wafer drawing.svg Semiconductor lithography processes technology
v · d · e

The 32 nanometer (32 nm) lithography process is a full node semiconductor manufacturing

process following the 40 nm process stopgap.

Commercial integrated circuit manufacturing using 32 nm process began in 2010.

This technology was superseded by the 28 nm process (HN) / 22 nm process (FN) in 2012.

Industry[edit]

Intel's 32 nm process became the first process to introduce the self-aligned via patterning.

TSMC cancelled its planned 32 nm node process.

Design Rules[edit]

Intel 32 nm Design Rules
Layer Pitch Thick Aspect
Ratio 		Image
Isolation 140 nm 200 -
intel 32nm design rules.png
Contacted
Gate 		112.5 nm 35 nm --
Metal 1 112.5 nm 95 nm 1.7
Metal 2 112.5 nm 95 nm 1.7
Metal 3 112.5 nm 95 nm 1.7
Metal 4 168.8 nm 151 nm 1.8
Metal 5 225.0 nm 204 nm 1.8
Metal 6 337.6 nm 303 nm 1.8
Metal 7 450.1 nm 388 nm 1.7
Metal 8 566.5 nm 504 nm 1.8
Metal 9 19.4 µm 8 µm 1.5
Bump 145.9 µm 25.5 µm -

Specifications[edit]

 
Process Name
1st Production
Litho-
graphy 		Lithography
Immersion
Exposure
Wafer Type
Size
Tran-
sistor 		Type
Voltage
Metal Layers
 
Gate Length (Lg)
Contacted Gate Pitch (CPP)
Minimum Metal Pitch (MMP)
SRAM
bitcell 		High-Perf (HP)
High-Density (HD)
Low-Voltage (LV)
DRAM
bitcell 		eDRAM
Intel TSMC Samsung
Common Platform Alliance - The Common Platform Alliance 20 nm node was a collaboration between IBM, Samsung, Freescale, Toshiba, Chartered Semiconductor Manufacturing, Infineon Technologies
 NEC
NEC - Toshiba
 AMD
Common Platform Alliance (SOI) - AMD, IBM, Freescale
P1268, P1269        
2009 cancelled 2011    
193 nm 193 nm 193 nm 193 nm 193 nm
Yes Yes Yes Yes Yes
DP DP DP DP DP
Bulk Bulk Bulk Bulk SOI
300 mm 300 mm 300 mm 300 mm 300 mm
Planar Planar Planar Planar Planar
1.0 V, 0.75 V 1.1 V 1.0 V, 0.8 V 1 V 1 V
9   11   11
Value 45 nm Δ Value 40 nm Δ Value 45 nm Δ Value 40 nm Δ Value 45 nm Δ
30 nm   30 nm   30 nm       25 nm  
112.5 nm 0.63x 130 nm   126 nm   120 nm   130 nm  
112.5 nm 0.70x 100 nm   100 nm   100 nm   100 nm  
0.199 µm²                  
0.148 µm²   0.15 µm²   0.157 µm²   0.124 µm²   0.149 µm²  
0.171 µm²                  
                0.039
µm² 		 

Find models[edit]

Click to browse all 32 nm MPU models

32 nm Microprocessors[edit]

This list is incomplete; you can help by expanding it.

32 nm Microarchitectures[edit]

This list is incomplete; you can help by expanding it.

Documents[edit]

References[edit]

  • Greene, B., et al. "High performance 32nm SOI CMOS with high-k/metal gate and 0.149 µm 2 SRAM and ultra low-k back end with eleven levels of copper." VLSI Technology, 2009 Symposium on. IEEE, 2009.
  • Jan, C-H., et al. "A 32nm SoC platform technology with 2 nd generation high-k/metal gate transistors optimized for ultra low power, high performance, and high density product applications." Electron Devices Meeting (IEDM), 2009 IEEE International. IEEE, 2009.
  • Wu, Shien-Yang, et al. "A 32nm CMOS low power SoC platform technology for foundry applications with functional high density SRAM." Electron Devices Meeting, 2007. IEDM 2007. IEEE International. IEEE, 2007.
  • Chen, X., et al. "A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first process." VLSI Technology, 2008 Symposium on. IEEE, 2008.
  • Diaz, C. H., et al. "32nm gate-first high-k/metal-gate technology for high performance low power applications." Electron Devices Meeting, 2008. IEDM 2008. IEEE International. IEEE, 2008.
  • Natarajan, S., et al. "A 32nm logic technology featuring 2 nd-generation high-k+ metal-gate transistors, enhanced channel strain and 0.171 μm 2 SRAM cell size in a 291Mb array." Electron Devices Meeting, 2008. IEDM 2008. IEEE International. IEEE, 2008.
  • Hasegawa, S., et al. "A cost-conscious 32nm CMOS platform technology with advanced single exposure lithography and gate-first metal gate/high-k process." Electron Devices Meeting, 2008. IEDM 2008. IEEE International. IEEE, 2008.
  • Arnaud, F., et al. "32nm general purpose bulk CMOS technology for high performance applications at low voltage." Electron Devices Meeting, 2008. IEDM 2008. IEEE International. IEEE, 2008.
  • Pilo, Harold, et al. "A 64 Mb SRAM in 32 nm high-k metal-gate SOI technology with 0.7 V operation enabled by stability, write-ability and read-ability enhancements." IEEE Journal of Solid-State Circuits 47.1 (2012): 97-106.
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