The 32 nm lithography process is a full node semiconductor manufacturing process following the 40 nm process stopgap. Commercial integrated circuit manufacturing using 32 nm process began in 2010. This technology was superseded by the 28 nm process (HN) / 22 nm process (FN) in 2012.

Industry

Intel

	Measurement	Scaling from 45 nm
Contacted Gate Pitch	112.5 nm	0.63x
Interconnect Pitch (M1P)	112.5 nm	0.70x
SRAM bit cell	0.171 µm2	0.63x

Design Rules
Layer	Pitch	Thick	Aspect Ratio
Isolation	140 nm	200	-
Contacted Gate	112.5 nm	35 nm	--
Metal 1	112.5 nm	95 nm	1.7
Metal 2	112.5 nm	95 nm	1.7
Metal 3	112.5 nm	95 nm	1.7
Metal 4	168.8 nm	151 nm	1.8
Metal 5	225.0 nm	204 nm	1.8
Metal 6	337.6 nm	303 nm	1.8
Metal 7	450.1 nm	388 nm	1.7
Metal 8	566.5 nm	504 nm	1.8
Metal 9	19.4 µm	8 µm	1.5

Samsung

	Measurement
Contacted Gate Pitch	113.4 nm
Interconnect Pitch (M1P)	113.4 nm
SRAM bit cell	0.120 µm2

TSMC

In 2010, TSMC cancelled its 32nm node process.

	Measurement
Contacted Gate Pitch	130 nm
Interconnect Pitch (M1P)	? nm
SRAM bit cell	0.15 µm2

32 nm Microprocessors

• AMD
  • A8
  • A10
• Intel
  • Core i7EE

This list is incomplete; you can help by expanding it.

32 nm System on Chips

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32 nm Microarchitectures

• Intel:
  • Saltwell
  • Sandy Bridge
  • Westmere

This list is incomplete; you can help by expanding it.