The 28 nanometer (28 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.

Industry

Fab
Process Name​
Transistor​
Wafer​
Metal Layers​
​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell (HD)​
SRAM bit cell (LP)​
SRAM bit cell (HC)

Samsung		TSMC		GlobalFoundries		STMicroelectronics		UMC
28LP/28LPP				28SLP
Planar
300 mm
		10
Value	40 nm Δ	Value	40 nm Δ	Value	40 nm Δ	Value	40 nm Δ	Value	40 nm Δ
113.4 nm	0.88x	117 nm	0.72x	113.4 nm	?x	?nm	?x	?nm	?x
90 nm	0.76x	95 nm	0.81x	90 nm	?x	?nm	?x	?nm	?x
0.120 µm²	?x	0.127 µm²	0.52x	0.120 µm²	?x	0.120 µm²	?x	0.124 µm²	?x
		0.155 µm²				0.197 µm²	?x	? µm²	?x
						0.152 µm²	?x

28 nm Microprocessors

• AMD
  • A8
  • A10
• Intel (Fab'ed by TSMC)
  • Atom x3
• MediaTek
  • Helio
• Phytium
  • FT-1500A
• PEZY
  • PEZY-SC
  • PEZY-SCnp
• Xiaomi
  • Surge

This list is incomplete; you can help by expanding it.

28 nm Microarchitectures

• AMD
  • Steamroller
  • Excavator
• ARM Holdings
  • Cortex-A53
• Phytium
  • Xiaomi

This list is incomplete; you can help by expanding it.

References

• Wu, Shien-Yang, et al. "A highly manufacturable 28nm cmos low power platform technology with fully functional 64mb sram using dual/tripe gate oxide process." VLSI Technology, 2009 Symposium on. IEEE, 2009.
• Shang, Huiling, et al. "High performance bulk planar 20nm CMOS technology for low power mobile applications." VLSI Technology (VLSIT), 2012 Symposium on. IEEE, 2012.
• James, Dick. "High-k/metal gates in the 2010s." Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI. IEEE, 2014.
• Samsung foundry solution for 32 & 28 nm