The 45 nm lithography process is a full node semiconductor manufacturing process following the 55 nm process stopgap. Commercial integrated circuit manufacturing using 45 nm process began in 2007. This technology was superseded by the 40 nm process (HN) / 32 nm process (FN) in 2010.

Industry

Intel

	Measurement	Scaling from 65 nm
Contacted Gate Pitch	180 nm	0.82x
Interconnect Pitch (M1P)	160 nm	0.76x
SRAM bit cell	0.346 µm2	0.61x

Design Rules
Layer	Pitch	Thick	Aspect Ratio
Isolation	200 nm	200 nm	-
Contacted Gate	180 nm	60 nm	--
Metal 1	160 nm	144 nm	1.8
Metal 2	160 nm	144 nm	1.8
Metal 3	160 nm	144 nm	1.8
Metal 4	240 nm	216 nm	1.8
Metal 5	280 nm	252 nm	1.8
Metal 6	360 nm	324 nm	1.8
Metal 7	560 nm	504 nm	1.7
Metal 8	810 nm	720 nm	1.8
Metal 9	30.5 µm	7 µm	0.4

TSMC

	Measurement
Contacted Gate Pitch	162 nm
Interconnect Pitch (M1P)	? nm
SRAM bit cell	0.242 µm2

Crolles2 Alliance

	Measurement
Contacted Gate Pitch	140 nm
Interconnect Pitch (M1P)	? nm
SRAM bit cell	0.250 µm2

45 nm Microprocessors

• Intel
  • Atom
  • Core i7EE

This list is incomplete; you can help by expanding it.

45 nm System on Chips

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45 nm Microarchitectures

• Intel:
  • Bonnell
  • Nehalem
  • Penryn

This list is incomplete; you can help by expanding it.