Revision as of 07:39, 10 October 2018

Semiconductor lithography processes technology

1 nm 2 nm 3 nm 5 nm 7 nm 10 nm 14 nm 16 nm 20 nm 22 nm 28 nm 32 nm 40 nm 45 nm 55 nm 65 nm 80 nm 90 nm 110 nm 130 nm 150 nm 180 nm 220 nm 240 nm 250 nm 280 nm 350 nm 500 nm 600 nm 650 nm 700 nm 750 nm 800 nm 1 µm 1.2 µm 1.3 µm 1.5 µm 2 µm 2.5 µm 3 µm 3.5 µm 5 µm 6 µm 7 µm 8 µm 10 µm 16 µm 20 µm 50 µm

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The 28 nanometer (28 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.

Industry

28 nm Microprocessors

• AMD
  • A8
  • A10
• HiSilicon
  • Kirin
• Intel (Fab'ed by TSMC)
  • Atom x3
• MediaTek
  • Helio
• Phytium
  • FT-1500A
• PEZY
  • PEZY-SC
  • PEZY-SCnp
• Renesas
  • R-Car
• Xiaomi
  • Surge

This list is incomplete; you can help by expanding it.

28 nm Microarchitectures

• AMD
  • Steamroller
  • Excavator
• ARM Holdings
  • Cortex-A53
• Nervana
  • Lake Crest
• Movidius
  • SHAVE v3.0
• Phytium
  • Xiaomi
• VIA Technologies
  • Isaiah II
• Zhaoxin
  • ZhangJiang
  • WuDaoKou

This list is incomplete; you can help by expanding it.

References

• Samsung foundry solution for 32 & 28 nm
• Wu, Shien-Yang, et al. "A highly manufacturable 28nm cmos low power platform technology with fully functional 64mb sram using dual/tripe gate oxide process." VLSI Technology, 2009 Symposium on. IEEE, 2009.
• Shang, Huiling, et al. "High performance bulk planar 20nm CMOS technology for low power mobile applications." VLSI Technology (VLSIT), 2012 Symposium on. IEEE, 2012.
• Arnaud, F., et al. "Competitive and cost effective high-k based 28nm CMOS technology for low power applications." Electron Devices Meeting (IEDM), 2009 IEEE International. IEEE, 2009.
• Yuan, J., et al. "Performance elements for 28nm gate length bulk devices with gate first high-k metal gate." Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on. IEEE, 2010.
• Liang, C. W., et al. "A 28nm poly/SiON CMOS technology for low-power SoC applications." VLSI Technology (VLSIT), 2011 Symposium on. IEEE, 2011.
• James, Dick. "High-k/metal gates in the 2010s." Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI. IEEE, 2014.