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Difference between revisions of "800 nm lithography process"

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** {{intel|80186|l=arch}} (embedded [[IP cores]] only)
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* ARM
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[[Category:Lithography]]
 
[[Category:Lithography]]

Revision as of 13:23, 2 July 2017

basic wafer drawing.svg Semiconductor lithography processes technology
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The 800 nanometer (800 nm) lithography process was a semiconductor manufacturing process used by a variety of integrated circuit manufacturers in the late 1980s and early 1990s. A "0.8 µm process" refers to a process which has a gate length of 0.8 µm. This process was later replaced by 650 nm, 600 nm, and 500 nm processes.

Industry

Fab
Process Name​
1st Production​
Voltage​
Metal Layers​
 ​
Gate Length​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel (BICMOS) Intel (CHMOS V) TI (CMOS) TI (BiCMOS) Cypress AMD Motorola NEC HP HP National (ASIC BiCMOS) National (Memory BiCMOS) Hitachi
P650 CMOS26B CMOS26G ABiC IV BiCMOS III
1991 1989 1991 1991 1989 1989 1991 1991 1991 1990 1990
5 V
3 2 2 2 3 2 3 4 2 2
Value Value 1 µm Δ Value Value Value Value Value Value Value Value Value Value Value
 ? nm  ? nm  ?x  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm 0.8 µm
 ? nm  ? nm  ?x  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm 2.5 µm 1.8 µm 1.4 µm
 ? µm² 111 µm² 0.50x  ? µm²  ? µm²  ? µm²  ? µm²  ? µm²  ? µm²  ? µm²  ? µm² 100 µm²  ? µm²  ? µm²

800 nm Microprocessors

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800 nm System on chips

800 nm Microarchitectures

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