Semiconductor & Computer Engineering
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Difference between revisions of "28 nm lithography process"
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| 114 nm || 0.88x || 117 nm || 0.72x || 114 nm || ?x || ?nm || ?x || ?nm || ?x | | 114 nm || 0.88x || 117 nm || 0.72x || 114 nm || ?x || ?nm || ?x || ?nm || ?x | ||
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| − | | | + | | 90 nm || 0.76x || 95 nm || 0.81x || 114 nm || ?x || ?nm || ?x || ?nm || ?x |
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| 0.120 µm² || ?x || 0.127 µm² || 0.52x || 0.120 µm² || ?x || 0.120 µm² || ?x || 0.124 µm² || ?x | | 0.120 µm² || ?x || 0.127 µm² || 0.52x || 0.120 µm² || ?x || 0.120 µm² || ?x || 0.124 µm² || ?x | ||
Revision as of 17:53, 28 March 2017
Semiconductor lithography processes technology
The 28 nanometer (28 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.
Industry
| Fab |
|---|
| Process Name |
| Transistor |
| Wafer |
| |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell (HD) |
| SRAM bit cell (LP) |
| SRAM bit cell (HC) |
| Samsung | TSMC | GlobalFoundries | STMicroelectronics | UMC | |||||
|---|---|---|---|---|---|---|---|---|---|
| 28LP | 28SLP | ||||||||
| Planar | |||||||||
| 300 mm | |||||||||
| Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ |
| 114 nm | 0.88x | 117 nm | 0.72x | 114 nm | ?x | ?nm | ?x | ?nm | ?x |
| 90 nm | 0.76x | 95 nm | 0.81x | 114 nm | ?x | ?nm | ?x | ?nm | ?x |
| 0.120 µm² | ?x | 0.127 µm² | 0.52x | 0.120 µm² | ?x | 0.120 µm² | ?x | 0.124 µm² | ?x |
| 0.155 µm² | 0.197 µm² | ?x | ? µm² | ?x | |||||
| 0.152 µm² | ?x | ||||||||
28 nm Microprocessors
- AMD
- Intel (Fab'ed by TSMC)
- MediaTek
- Phytium
- PEZY
- Xiaomi
This list is incomplete; you can help by expanding it.
28 nm Microarchitectures
- AMD
- ARM Holdings
- Phytium
This list is incomplete; you can help by expanding it.
References
- Shang, Huiling, et al. "High performance bulk planar 20nm CMOS technology for low power mobile applications." VLSI Technology (VLSIT), 2012 Symposium on. IEEE, 2012.
- James, Dick. "High-k/metal gates in the 2010s." Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI. IEEE, 2014.