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Difference between revisions of "2 µm lithography process"
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== Industry == | == Industry == | ||
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| − | | | + | | compare |
| − | | | + | | fab 1 name link = intel |
| − | | | + | | fab 1 proc name = CHMOS II |
| − | | | + | | fab 1 name = Intel |
| − | | | + | | fab 1 date = 1979 |
| − | | | + | | fab 1 wafer.type = Bulk |
| − | | | + | | fab 1 wafer.size = |
| + | | fab 1 xtor.tech = CMOS | ||
| + | | fab 1 xtor.type = Planar | ||
| + | | fab 1 xtor.volt = 5 V | ||
| + | | fab 1 layers = 1 | ||
| + | | fab 1 diff from = [[3 µm]] Δ | ||
| + | | fab 1 xtor.lg = 2 µm | ||
| + | | fab 1 xtor.lgΔ = 0.80x | ||
| + | | fab 1 xtor.cpp = 5.6 µm | ||
| + | | fab 1 xtor.cppΔ = | ||
| + | | fab 1 xtor.mmp = 8 µm | ||
| + | | fab 1 xtor.mmpΔ = | ||
| + | | fab 1 sram.hp = | ||
| + | | fab 1 sram.hpΔ = | ||
| + | | fab 1 sram.hd = 1740 µm² | ||
| + | | fab 1 sram.hdΔ = | ||
| + | | fab 1 sram.lv = | ||
| + | | fab 1 sram.lvΔ = | ||
| + | | fab 1 dram.edram = | ||
| + | | fab 1 dram.edramΔ = | ||
| + | |||
| + | | fab 2 name link = intel | ||
| + | | fab 2 name = Intel | ||
| + | | fab 2 proc name = P414.1 (HMOS-II) | ||
| + | | fab 2 date = 1980 | ||
| + | | fab 2 wafer.type = Bulk | ||
| + | | fab 2 wafer.size = | ||
| + | | fab 2 xtor.tech = | ||
| + | | fab 2 xtor.type = Planar | ||
| + | | fab 2 xtor.volt = 5 V | ||
| + | | fab 2 layers = | ||
| + | | fab 2 diff from = | ||
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| + | | fab 2 xtor.lgΔ = | ||
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| + | | fab 2 sram.hp = | ||
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| + | | fab 2 sram.hd = | ||
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| + | | fab 2 sram.lv = | ||
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| + | | fab 2 dram.edram = | ||
| + | | fab 2 dram.edramΔ = | ||
| + | |||
| + | | fab 3 name link = intel | ||
| + | | fab 3 name = Intel | ||
| + | | fab 3 proc name = P421.X (HMOS-E) | ||
| + | | fab 3 date = 1980 | ||
| + | | fab 3 wafer.type = Bulk | ||
| + | | fab 3 wafer.size = | ||
| + | | fab 3 xtor.tech = pMOS | ||
| + | | fab 3 xtor.type = Planar | ||
| + | | fab 3 xtor.volt = 5 V | ||
| + | | fab 3 layers = | ||
| + | | fab 3 diff from = @ | ||
| + | | fab 3 xtor.lg = | ||
| + | | fab 3 xtor.lgΔ = | ||
| + | | fab 3 xtor.cpp = | ||
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| + | | fab 3 sram.hp = | ||
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| + | | fab 3 sram.hd = | ||
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| + | | fab 3 sram.lv = | ||
| + | | fab 3 sram.lvΔ = | ||
| + | | fab 3 dram.edram = | ||
| + | | fab 3 dram.edramΔ = | ||
| + | |||
| + | | fab 4 name link = amd | ||
| + | | fab 4 name = AMD | ||
| + | | fab 4 proc name = | ||
| + | | fab 4 date = | ||
| + | | fab 4 wafer.type = Bulk | ||
| + | | fab 4 wafer.size = | ||
| + | | fab 4 xtor.tech = | ||
| + | | fab 4 xtor.type = | ||
| + | | fab 4 xtor.volt = | ||
| + | | fab 4 layers = | ||
| + | | fab 4 diff from = @ | ||
| + | | fab 4 xtor.lg = | ||
| + | | fab 4 xtor.lgΔ = | ||
| + | | fab 4 xtor.cpp = | ||
| + | | fab 4 xtor.cppΔ = | ||
| + | | fab 4 xtor.mmp = | ||
| + | | fab 4 xtor.mmpΔ = | ||
| + | | fab 4 sram.hp = | ||
| + | | fab 4 sram.hpΔ = | ||
| + | | fab 4 sram.hd = | ||
| + | | fab 4 sram.hdΔ = | ||
| + | | fab 4 sram.lv = | ||
| + | | fab 4 sram.lvΔ = | ||
| + | | fab 4 dram.edram = | ||
| + | | fab 4 dram.edramΔ = | ||
| + | |||
| + | | fab 5 name link = motorola | ||
| + | | fab 5 name = Motorola | ||
| + | | fab 5 proc name = | ||
| + | | fab 5 date = | ||
| + | | fab 5 wafer.type = Bulk | ||
| + | | fab 5 wafer.size = | ||
| + | | fab 5 xtor.tech = | ||
| + | | fab 5 xtor.type = | ||
| + | | fab 5 xtor.volt = | ||
| + | | fab 5 layers = | ||
| + | | fab 5 diff from = @ | ||
| + | | fab 5 xtor.lg = | ||
| + | | fab 5 xtor.lgΔ = | ||
| + | | fab 5 xtor.cpp = | ||
| + | | fab 5 xtor.cppΔ = | ||
| + | | fab 5 xtor.mmp = | ||
| + | | fab 5 xtor.mmpΔ = | ||
| + | | fab 5 sram.hp = | ||
| + | | fab 5 sram.hpΔ = | ||
| + | | fab 5 sram.hd = | ||
| + | | fab 5 sram.hdΔ = | ||
| + | | fab 5 sram.lv = | ||
| + | | fab 5 sram.lvΔ = | ||
| + | | fab 5 dram.edram = | ||
| + | | fab 5 dram.edramΔ = | ||
| + | |||
| + | | fab 6 name link = stmicroelectronics | ||
| + | | fab 6 name = STMicro | ||
| + | | fab 6 proc name = | ||
| + | | fab 6 date = 1992 | ||
| + | | fab 6 wafer.type = | ||
| + | | fab 6 wafer.size = | ||
| + | | fab 6 xtor.tech = | ||
| + | | fab 6 xtor.type = | ||
| + | | fab 6 xtor.volt = | ||
| + | | fab 6 layers = | ||
| + | | fab 6 diff from = @ | ||
| + | | fab 6 xtor.lg = | ||
| + | | fab 6 xtor.lgΔ = | ||
| + | | fab 6 xtor.cpp = | ||
| + | | fab 6 xtor.cppΔ = | ||
| + | | fab 6 xtor.mmp = | ||
| + | | fab 6 xtor.mmpΔ = | ||
| + | | fab 6 sram.hp = | ||
| + | | fab 6 sram.hpΔ = | ||
| + | | fab 6 sram.hd = | ||
| + | | fab 6 sram.hdΔ = | ||
| + | | fab 6 sram.lv = | ||
| + | | fab 6 sram.lvΔ = | ||
| + | | fab 6 dram.edram = | ||
| + | | fab 6 dram.edramΔ = | ||
| + | |||
| + | | fab 7 name link = toshiba | ||
| + | | fab 7 name = Toshiba | ||
| + | | fab 7 proc name = | ||
| + | | fab 7 date = | ||
| + | | fab 7 wafer.type = Bulk | ||
| + | | fab 7 wafer.size = | ||
| + | | fab 7 xtor.tech = | ||
| + | | fab 7 xtor.type = | ||
| + | | fab 7 xtor.volt = | ||
| + | | fab 7 layers = | ||
| + | | fab 7 diff from = @ | ||
| + | | fab 7 xtor.lg = | ||
| + | | fab 7 xtor.lgΔ = | ||
| + | | fab 7 xtor.cpp = | ||
| + | | fab 7 xtor.cppΔ = | ||
| + | | fab 7 xtor.mmp = | ||
| + | | fab 7 xtor.mmpΔ = | ||
| + | | fab 7 sram.hp = | ||
| + | | fab 7 sram.hpΔ = | ||
| + | | fab 7 sram.hd = | ||
| + | | fab 7 sram.hdΔ = | ||
| + | | fab 7 sram.lv = | ||
| + | | fab 7 sram.lvΔ = | ||
| + | | fab 7 dram.edram = | ||
| + | | fab 7 dram.edramΔ = | ||
| + | |||
| + | | fab 8 name link = ti | ||
| + | | fab 8 name = TI | ||
| + | | fab 8 proc name = | ||
| + | | fab 8 date = | ||
| + | | fab 8 wafer.type = Bulk | ||
| + | | fab 8 wafer.size = | ||
| + | | fab 8 xtor.tech = | ||
| + | | fab 8 xtor.type = | ||
| + | | fab 8 xtor.volt = | ||
| + | | fab 8 layers = | ||
| + | | fab 8 diff from = @ | ||
| + | | fab 8 xtor.lg = | ||
| + | | fab 8 xtor.lgΔ = | ||
| + | | fab 8 xtor.cpp = | ||
| + | | fab 8 xtor.cppΔ = | ||
| + | | fab 8 xtor.mmp = | ||
| + | | fab 8 xtor.mmpΔ = | ||
| + | | fab 8 sram.hp = | ||
| + | | fab 8 sram.hpΔ = | ||
| + | | fab 8 sram.hd = | ||
| + | | fab 8 sram.hdΔ = | ||
| + | | fab 8 sram.lv = | ||
| + | | fab 8 sram.lvΔ = | ||
| + | | fab 8 dram.edram = | ||
| + | | fab 8 dram.edramΔ = | ||
| + | |||
| + | | fab 9 name link = hitachi | ||
| + | | fab 9 name = Hitachi | ||
| + | | fab 9 proc name = Hi-CMOS II | ||
| + | | fab 9 date = 1982 | ||
| + | | fab 9 wafer.type = Bulk | ||
| + | | fab 9 wafer.size = | ||
| + | | fab 9 xtor.tech = | ||
| + | | fab 9 xtor.type = | ||
| + | | fab 9 xtor.volt = 5 V | ||
| + | | fab 9 layers = | ||
| + | | fab 9 diff from = [[3 µm]] | ||
| + | | fab 9 xtor.lg = 2 µm | ||
| + | | fab 9 xtor.lgΔ = 0.67x | ||
| + | | fab 9 xtor.cpp = | ||
| + | | fab 9 xtor.cppΔ = | ||
| + | | fab 9 xtor.mmp = 3 µm | ||
| + | | fab 9 xtor.mmpΔ = 1.00x | ||
| + | | fab 9 sram.hp = | ||
| + | | fab 9 sram.hpΔ = | ||
| + | | fab 9 sram.hd = 303.8 µm² | ||
| + | | fab 9 sram.hdΔ = 0.34x | ||
| + | | fab 9 sram.lv = | ||
| + | | fab 9 sram.lvΔ = | ||
| + | | fab 9 dram.edram = | ||
| + | | fab 9 dram.edramΔ = | ||
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== Microprocessors == | == Microprocessors == | ||
Revision as of 22:57, 27 June 2017
The 2 µm lithography process was the semiconductor process technology used by the some semiconductor companies in the mid to late 1980s. By the mid 80s this process was replaced by 1.5 µm, 1.3 µm, and 1.2 µm processes.
Industry
| Foundry | |
|---|---|
| Process Name | |
| 1st Production | |
| Wafer | Type |
| Size | |
| Transistor | Technology |
| Type | |
| Voltage | |
| Metal Layers | |
| Gate Length (Lg) | |
| Contacted Gate Pitch (CPP) | |
| Minimum Metal Pitch (MMP) | |
| SRAM bitcell | High-Perf (HP) |
| High-Density (HD) | |
| Low-Voltage (LV) | |
| DRAM bitcell | eDRAM |
| Intel | Intel | Intel | AMD | Motorola | STMicro | Toshiba | TI | Hitachi | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CHMOS II | P414.1 (HMOS-II) | P421.X (HMOS-E) | Hi-CMOS II | ||||||||||||||
| 1979 | 1980 | 1980 | 1992 | 1982 | |||||||||||||
| Bulk | Bulk | Bulk | Bulk | Bulk | Bulk | Bulk | Bulk | ||||||||||
| CMOS | pMOS | ||||||||||||||||
| Planar | Planar | Planar | |||||||||||||||
| 5 V | 5 V | 5 V | 5 V | ||||||||||||||
| 1 | |||||||||||||||||
| Value | 3 µm Δ | Value | Value | N/A | Value | N/A | Value | N/A | Value | N/A | Value | N/A | Value | N/A | Value | 3 µm | |
| 2 µm | 0.80x | 2 µm | 0.67x | ||||||||||||||
| 5.6 µm | |||||||||||||||||
| 8 µm | 3 µm | 1.00x | |||||||||||||||
| 1740 µm² | 303.8 µm² | 0.34x | |||||||||||||||
Microprocessors
This list is incomplete; you can help by expanding it.
References
- Minato, O., et al. "A Hi-CMOSII 8Kx8 bit static RAM." IEEE Journal of Solid-State Circuits 17.5 (1982): 793-798.
- Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.