Revision as of 13:08, 7 December 2016

Semiconductor lithography processes technology

1 nm 2 nm 3 nm 5 nm 7 nm 10 nm 14 nm 16 nm 20 nm 22 nm 28 nm 32 nm 40 nm 45 nm 55 nm 65 nm 80 nm 90 nm 110 nm 130 nm 150 nm 180 nm 220 nm 240 nm 250 nm 280 nm 350 nm 500 nm 600 nm 650 nm 700 nm 750 nm 800 nm 1 µm 1.2 µm 1.3 µm 1.5 µm 2 µm 2.5 µm 3 µm 3.5 µm 5 µm 6 µm 7 µm 8 µm 10 µm 16 µm 20 µm 50 µm

v · d · e

The 10 nanometer (10 nm) lithography process is a full node semiconductor manufacturing process following the 14 nm process stopgap. The term "10 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. Commercial mass production of integrated circuit manufacturing using 10 nm process begun in late 2016. This technology is set to be replaced by 7 nm process 2019.

Industry

Preliminary Data! Information presented in this article deal with future products, data, features, and specifications that have yet to be finalized, announced, or released. Information may be incomplete and can change by final release.

10 nm Microprocessors

• MediaTek
  • Helio
• Qualcomm
  • Snapdragon 800
  • Centriq

This list is incomplete; you can help by expanding it.

10 nm Microarchitectures

• Intel
  • Cannonlake
  • Icelake
  • Tigerlake
• Qualcomm
  • Falkor

This list is incomplete; you can help by expanding it.

References