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Difference between revisions of "800 nm lithography process"

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{{lithography processes}}
 
{{lithography processes}}
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The '''650 nm lithography process''' was a semiconductor manufacturing process used by the leading [[integrated circuit]] manufacturers in early 1990s. This process was later replaced by [[650 nm]], [[600 nm]], and [[500 nm]] processes.
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The '''800 nanometer (800 nm) lithography process''' was a semiconductor manufacturing process used by a variety of [[integrated circuit]] manufacturers in the late 1980s and early 1990s. A '''"0.8 µm process"''' refers to a process which has a gate length of 0.8 µm. This process was later replaced by [[650 nm]], [[600 nm]], and [[500 nm]] processes.
  
 
== Industry ==
 
== Industry ==
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  |Process Name
 
  |Process Name
 
  |1st Production
 
  |1st Production
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|Voltage
 +
|Metal Layers
 
  | 
 
  | 
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  |Contacted Gate Pitch
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  |Gate Length
 
  |Interconnect Pitch (M1P)
 
  |Interconnect Pitch (M1P)
 
  |SRAM bit cell
 
  |SRAM bit cell
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{{scrolling table/mid}}
 
{{scrolling table/mid}}
 
|-
 
|-
−
! [[Intel]] (BICMOS) !! [[Intel]] (CHMOS V) !! [[Intel]] (CMOS) !! [[TI]] (CMOS) !! [[TI]] (BiCMOS) !! [[Cypress]] !! [[AMD]] !! [[Motorola]] !! [[NEC]] !! [[HP]]
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! [[Intel]] (BICMOS) !! colspan="2" | [[Intel]] (CHMOS V) !! [[TI]] (CMOS) !! [[TI]] (BiCMOS) !! [[Cypress]] !! [[AMD]] !! [[Motorola]] !! [[NEC]] !! [[HP]] !! [[HP]] !! [[National Semiconductor|National]] (ASIC BiCMOS) !! [[National Semiconductor|National]] (Memory BiCMOS) !! [[Hitachi]]
 
|- style="text-align: center;"
 
|- style="text-align: center;"
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| || || P650 || || || || || || || CMOS26B
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| || colspan="2" | P650 || || || || || || || CMOS26B || CMOS26G || ABiC IV || BiCMOS III ||
 
|- style="text-align: center;"
 
|- style="text-align: center;"
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| 1991 || 1990 || 1989 || 1991 || 1991 || 1989 || 1991 || 1991 || 1991 || 1991
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| 1991 || colspan="2" | 1989 || 1991 || 1991 || 1989 || 1989 || 1991 || 1991 || 1991 || || 1990 || 1990 ||
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|- style="text-align: center;"
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| || || || || || || || || || || || || || 5 V
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|-
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|  || colspan="2" | 3 || 2 || 2 || 2 ||  || 3 || 2 || 3 ||  || 4 || 2 || 2
 
|-
 
|-
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! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value
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! Value !! Value !! [[1 µm]] Δ !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value
 
|-
 
|-
−
| ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm
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| ? nm || ? nm || ?x || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || 0.8 µm
 
|-
 
|-
−
| ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm
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| ? nm || ? nm || ?x || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || 2.5 µm || 1.8 µm || 1.4 µm
 
|-
 
|-
−
| ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> || ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> || ? µm<sup>2</sup>
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| ? µm² ||  111 µm² || 0.50x ||  ? µm² ||  ? µm² || ? µm² ||  ? µm² ||  ? µm² || ? µm² ||  ? µm² ||  ? µm² ||  100 µm² || ? µm² || ? µm²
 
{{scrolling table/end}}
 
{{scrolling table/end}}
  
 
== 800 nm Microprocessors ==
 
== 800 nm Microprocessors ==
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* AMD
 +
** {{amd|80386}}
 +
* Cypress
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** {{cypress|CY7C601}}
 +
* HP
 +
** {{hp|PA-7100}}
 
* Intel
 
* Intel
 
** {{intel|80486}}, 1989
 
** {{intel|80486}}, 1989
 +
** {{intel|80486 DX2}}
 +
** {{intel|80486 DX4}}
 
** {{intel|pentium (1992)|Pentium}}, 1992
 
** {{intel|pentium (1992)|Pentium}}, 1992
 +
* MIPS
 +
** {{mips|R4000}}
 +
* Motorola
 +
** {{motorola|68030}}
 +
** {{motorola|68040}}
 +
* Qualcomm
 +
** {{qualcomm|MSM1}}
 
* Sun
 
* Sun
 
** {{sun|microSPARC I}}, 1992
 
** {{sun|microSPARC I}}, 1992
 +
** {{sun|SuperSPARC II}}
 +
{{expand list}}
 +
 +
== 800 nm System on chips ==
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* AMD
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** {{amd|Am286ZX/LX}}
 +
 +
== 800 nm Microarchitectures ==
 +
* Intel
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** {{intel|80486|l=arch}} (later models)
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** {{intel|80186|l=arch}} (embedded [[IP cores]] only)
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* ARM
 +
** {{armh|ARM6|l=arch}}
 
{{expand list}}
 
{{expand list}}
  
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[[Category:Lithography]]
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 +
[[category:lithography]]

Latest revision as of 22:04, 20 May 2018

basic wafer drawing.svg Semiconductor lithography processes technology
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The 800 nanometer (800 nm) lithography process was a semiconductor manufacturing process used by a variety of integrated circuit manufacturers in the late 1980s and early 1990s. A "0.8 µm process" refers to a process which has a gate length of 0.8 µm. This process was later replaced by 650 nm, 600 nm, and 500 nm processes.

Industry[edit]

Fab
Process Name​
1st Production​
Voltage​
Metal Layers​
 ​
Gate Length​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel (BICMOS) Intel (CHMOS V) TI (CMOS) TI (BiCMOS) Cypress AMD Motorola NEC HP HP National (ASIC BiCMOS) National (Memory BiCMOS) Hitachi
P650 CMOS26B CMOS26G ABiC IV BiCMOS III
1991 1989 1991 1991 1989 1989 1991 1991 1991 1990 1990
5 V
3 2 2 2 3 2 3 4 2 2
Value Value 1 µm Δ Value Value Value Value Value Value Value Value Value Value Value
 ? nm  ? nm  ?x  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm 0.8 µm
 ? nm  ? nm  ?x  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm 2.5 µm 1.8 µm 1.4 µm
 ? µm² 111 µm² 0.50x  ? µm²  ? µm²  ? µm²  ? µm²  ? µm²  ? µm²  ? µm²  ? µm² 100 µm²  ? µm²  ? µm²

800 nm Microprocessors[edit]

This list is incomplete; you can help by expanding it.

800 nm System on chips[edit]

800 nm Microarchitectures[edit]

This list is incomplete; you can help by expanding it.

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