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| − | {{ | + | {{lithography processes}} |
| − | The ''' | + | The '''800 nanometer (800 nm) lithography process''' was a semiconductor manufacturing process used by a variety of [[integrated circuit]] manufacturers in the late 1980s and early 1990s. A '''"0.8 µm process"''' refers to a process which has a gate length of 0.8 µm. This process was later replaced by [[650 nm]], [[600 nm]], and [[500 nm]] processes. |
| − | == | + | == Industry == |
| − | + | {{scrolling table/top|style=text-align: right; | first=Fab | |
| + | |Process Name | ||
| + | |1st Production | ||
| + | |Voltage | ||
| + | |Metal Layers | ||
| + | | | ||
| + | |Gate Length | ||
| + | |Interconnect Pitch (M1P) | ||
| + | |SRAM bit cell | ||
| + | }} | ||
| + | {{scrolling table/mid}} | ||
| + | |- | ||
| + | ! [[Intel]] (BICMOS) !! colspan="2" | [[Intel]] (CHMOS V) !! [[TI]] (CMOS) !! [[TI]] (BiCMOS) !! [[Cypress]] !! [[AMD]] !! [[Motorola]] !! [[NEC]] !! [[HP]] !! [[HP]] !! [[National Semiconductor|National]] (ASIC BiCMOS) !! [[National Semiconductor|National]] (Memory BiCMOS) !! [[Hitachi]] | ||
| + | |- style="text-align: center;" | ||
| + | | || colspan="2" | P650 || || || || || || || CMOS26B || CMOS26G || ABiC IV || BiCMOS III || | ||
| + | |- style="text-align: center;" | ||
| + | | 1991 || colspan="2" | 1989 || 1991 || 1991 || 1989 || 1989 || 1991 || 1991 || 1991 || || 1990 || 1990 || | ||
| + | |- style="text-align: center;" | ||
| + | | || || || || || || || || || || || || || 5 V | ||
| + | |- | ||
| + | | || colspan="2" | 3 || 2 || 2 || 2 || || 3 || 2 || 3 || || 4 || 2 || 2 | ||
| + | |- | ||
| + | ! Value !! Value !! [[1 µm]] Δ !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value | ||
| + | |- | ||
| + | | ? nm || ? nm || ?x || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || 0.8 µm | ||
| + | |- | ||
| + | | ? nm || ? nm || ?x || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || 2.5 µm || 1.8 µm || 1.4 µm | ||
| + | |- | ||
| + | | ? µm² || 111 µm² || 0.50x || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || 100 µm² || ? µm² || ? µm² | ||
| + | {{scrolling table/end}} | ||
| − | [[ | + | == 800 nm Microprocessors == |
| + | * AMD | ||
| + | ** {{amd|80386}} | ||
| + | * Cypress | ||
| + | ** {{cypress|CY7C601}} | ||
| + | * HP | ||
| + | ** {{hp|PA-7100}} | ||
| + | * Intel | ||
| + | ** {{intel|80486}}, 1989 | ||
| + | ** {{intel|80486 DX2}} | ||
| + | ** {{intel|80486 DX4}} | ||
| + | ** {{intel|pentium (1992)|Pentium}}, 1992 | ||
| + | * MIPS | ||
| + | ** {{mips|R4000}} | ||
| + | * Motorola | ||
| + | ** {{motorola|68030}} | ||
| + | ** {{motorola|68040}} | ||
| + | * Qualcomm | ||
| + | ** {{qualcomm|MSM1}} | ||
| + | * Sun | ||
| + | ** {{sun|microSPARC I}}, 1992 | ||
| + | ** {{sun|SuperSPARC II}} | ||
| + | {{expand list}} | ||
| + | |||
| + | == 800 nm System on chips == | ||
| + | * AMD | ||
| + | ** {{amd|Am286ZX/LX}} | ||
| + | |||
| + | == 800 nm Microarchitectures == | ||
| + | * Intel | ||
| + | ** {{intel|80486|l=arch}} (later models) | ||
| + | ** {{intel|80186|l=arch}} (embedded [[IP cores]] only) | ||
| + | * ARM | ||
| + | ** {{armh|ARM6|l=arch}} | ||
| + | {{expand list}} | ||
| + | |||
| + | |||
| + | [[category:lithography]] | ||
Latest revision as of 22:04, 20 May 2018
The 800 nanometer (800 nm) lithography process was a semiconductor manufacturing process used by a variety of integrated circuit manufacturers in the late 1980s and early 1990s. A "0.8 µm process" refers to a process which has a gate length of 0.8 µm. This process was later replaced by 650 nm, 600 nm, and 500 nm processes.
Industry[edit]
| Fab |
|---|
| Process Name |
| 1st Production |
| Voltage |
| Metal Layers |
| |
| Gate Length |
| Interconnect Pitch (M1P) |
| SRAM bit cell |
| Intel (BICMOS) | Intel (CHMOS V) | TI (CMOS) | TI (BiCMOS) | Cypress | AMD | Motorola | NEC | HP | HP | National (ASIC BiCMOS) | National (Memory BiCMOS) | Hitachi | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| P650 | CMOS26B | CMOS26G | ABiC IV | BiCMOS III | |||||||||
| 1991 | 1989 | 1991 | 1991 | 1989 | 1989 | 1991 | 1991 | 1991 | 1990 | 1990 | |||
| 5 V | |||||||||||||
| 3 | 2 | 2 | 2 | 3 | 2 | 3 | 4 | 2 | 2 | ||||
| Value | Value | 1 µm Δ | Value | Value | Value | Value | Value | Value | Value | Value | Value | Value | Value |
| ? nm | ? nm | ?x | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | 0.8 µm |
| ? nm | ? nm | ?x | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | 2.5 µm | 1.8 µm | 1.4 µm |
| ? µm² | 111 µm² | 0.50x | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | 100 µm² | ? µm² | ? µm² |
800 nm Microprocessors[edit]
- AMD
- Cypress
- HP
- Intel
- MIPS
- Motorola
- Qualcomm
- Sun
- microSPARC I, 1992
- SuperSPARC II
This list is incomplete; you can help by expanding it.
800 nm System on chips[edit]
- AMD
800 nm Microarchitectures[edit]
This list is incomplete; you can help by expanding it.