Semiconductor & Computer Engineering
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Difference between revisions of "32 nm lithography process"
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| Metal 9 || 19.4 µm || 8 µm || 1.5 | | Metal 9 || 19.4 µm || 8 µm || 1.5 | ||
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| + | === Samsung === | ||
| + | {| class="wikitable" | ||
| + | |- | ||
| + | | || Measurement | ||
| + | |- | ||
| + | | Contacted Gate Pitch || 113.4 nm | ||
| + | |- | ||
| + | | Interconnect Pitch (M1P) || 113.4 nm | ||
| + | |- | ||
| + | | [[SRAM]] bit cell || 0.120 µm<sup>2</sup> | ||
| + | |} | ||
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== 32 nm Microprocessors== | == 32 nm Microprocessors== | ||
* AMD | * AMD | ||
Revision as of 21:57, 23 April 2016
Semiconductor lithography processes technology
The 32 nm lithography process is a full node semiconductor manufacturing process following the 40 nm process stopgap. Commercial integrated circuit manufacturing using 32 nm process began in 2010. This technology was superseded by the 28 nm process (HN) / 22 nm process (FN) in 2012.
Contents
Industry
Intel
| Measurement | Scaling from 45 nm | |
| Contacted Gate Pitch | 112.5 nm | 0.63x |
| Interconnect Pitch (M1P) | 112.5 nm | 0.70x |
| SRAM bit cell | 0.171 µm2 | 0.63x |
| Design Rules | |||
|---|---|---|---|
| Layer | Pitch | Thick | Aspect Ratio |
| Isolation | 140 nm | 200 | - |
| Contacted Gate | 112.5 nm | 35 nm | -- |
| Metal 1 | 112.5 nm | 95 nm | 1.7 |
| Metal 2 | 112.5 nm | 95 nm | 1.7 |
| Metal 3 | 112.5 nm | 95 nm | 1.7 |
| Metal 4 | 168.8 nm | 151 nm | 1.8 |
| Metal 5 | 225.0 nm | 204 nm | 1.8 |
| Metal 6 | 337.6 nm | 303 nm | 1.8 |
| Metal 7 | 450.1 nm | 388 nm | 1.7 |
| Metal 8 | 566.5 nm | 504 nm | 1.8 |
| Metal 9 | 19.4 µm | 8 µm | 1.5 |
Samsung
| Measurement | |
| Contacted Gate Pitch | 113.4 nm |
| Interconnect Pitch (M1P) | 113.4 nm |
| SRAM bit cell | 0.120 µm2 |
32 nm Microprocessors
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32 nm System on Chips
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32 nm Microarchitectures
- Intel:
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