The 180 nm lithography process is a full node semiconductor manufacturing process following the 220 nm process stopgap. Commercial integrated circuit manufacturing using 180 nm process began in late 1998. This technology was replaced by with 150 nm process (HN) in 2000 and 130 nm process (FN) in 2001.

Industry

The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects.

Intel

• 200mm (8-inch) wafers

	Measurement	Scaling from 250 nm
Contacted Gate Pitch	480 nm
Interconnect Pitch (M1P)	500 nm
SRAM bit cell	5.59 µm2	.56x

180 nm Microprocessors

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180 nm System on Chips

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180 nm Microarchitectures

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