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1.5 µm lithography process
The 1.5 µm lithography process was the semiconductor process technology used by the major semiconductor companies in the mid 1980s. This process had an effective channel length of roughly 1.5 µm between the source and drain. By the late 80s this process was replaced by 1.3 µm, 1.2 µm, and 1 µm processes.
Industry
Fab |
---|
Process Name |
1st Production |
Contacted Gate Pitch |
Interconnect Pitch (M1P) |
Metal Layers |
SRAM bit cell |
Wafer |
Intel | Intel | Intel | HP | AMD | DEC |
---|---|---|---|---|---|
HMOS-II | HMOS-E | P646 (CHMOS III) | NMOS III | CMOS-2 | |
1982 | 1982 | 1985 | 1981 | 1982 | |
? nm | ? nm | ? nm | 1.5 µm | ||
? nm | ? nm | ? nm | 2.5 µm | ||
2 | ? | 2 | 2 | 2 | 2 |
? µm² | ? µm² | ? µm² | ? µm² | ? µm² | |
125 mm | 150 mm |
HP
HP NMOS-III Design Rules | ||
---|---|---|
Layer | Description | |
Oxide | 450 nm thick silicon dioxide 1.5 µm x 1.5 µm minimum contact area, zero overlap to polysilicon, zero overlap of first metal layer | |
M1 | 1.5 µm wide line / 1.0 µm space 0.4 ohm/square sheet resistance | |
Intemediate Oxide | 550 nm-thick silicon dioxide 1.5 µm x 2.0 µm minimum contact area, zero overlap to first metal layer 2.0 µm overlap of second metal layer to via | |
M2 | 5.0 µm wide line / 3.0 µm space 0.4 ohm/square sheet resistance |
DEC
DEC operated their 1.5 µm process (CMOS-2) at their Hudson foundry. This 2 ML process had an effective channel length of 0.9 µm with a polycide width of 1.5 µm (1.5 µm spacing) and a TOX of 22.5 nm.
DEC Design Rules | ||
---|---|---|
Width | Spacing | |
Polycide | 1.5 µm | 1.5 µm |
Metal 1 | 3 µm | 1.5 µm |
Metal 1 Contact | 1.5 µm x 1.5 µm | |
Metal 2 | 3.75 µm | 1.5 |
Metal 2 Contact | 1.5 µm x 1.5 µm |
1.5 µm Microprocessors
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1.5 µm Microarchitectures
- Intel
This list is incomplete; you can help by expanding it.
- DEC