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800 nm lithography process
Revision as of 15:47, 2 January 2017 by David (talk | contribs) (800 nm Microarchitectures)

The 800 nanometer (800 nm) lithography process was a semiconductor manufacturing process used by a variety of integrated circuit manufacturers in early 1990s. This process was later replaced by 650 nm, 600 nm, and 500 nm processes.

Industry

Fab
Process Name​
1st Production​
Metal Layers​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel (BICMOS) Intel (CHMOS V) TI (CMOS) TI (BiCMOS) Cypress AMD Motorola NEC HP HP National (ASIC BiCMOS) National (Memory BiCMOS)
P650 CMOS26B CMOS26G ABiC IV BiCMOS III
1991 1989 1991 1991 1989 1989 1991 1991 1991 1990 1990
3 2 2 2 3 2 3 4 2
Value Value 1 µm Δ Value Value Value Value Value Value Value Value Value Value
 ? nm  ? nm  ?x  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm
 ? nm  ? nm  ?x  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm 2.5 µm 1.8 µm
 ? µm2 111 µm2 0.50x  ? µm2  ? µm2  ? µm2  ? µm2  ? µm2  ? µm2  ? µm2  ? µm2 100 µm2  ? µm2

800 nm Microprocessors

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800 nm System on chips

800 nm Microarchitectures

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