16 nm lithography process

Semiconductor lithography processes technology

1 nm • 18A
2 nm • 3 nm
5 nm • 7 nm
10 nm • 12 nm
14 nm • 16 nm
20 nm • 22 nm
28 nm • 32 nm
40 nm • 45 nm
55 nm • 65 nm
80 nm • 90 nm
110 nm • 130 nm
150 nm • 180 nm
220 nm • 240 nm
250 nm • 280 nm
350 nm • 500 nm
600 nm • 650 nm
700 nm • 750 nm
800 nm
1 µm • 1.2 µm
1.3 µm • 1.5 µm
2 µm • 2.5 µm
3 µm • 3.5 µm
5 µm • 6 µm
7 µm • 8 µm
10 µm • 16 µm
20 µm • 50 µm

The 16 nanometer (16 nm) lithography process is a full node semiconductor manufacturing process following the 20 nm process stopgap. Commercial integrated circuit manufacturing using 16 nm process began in 2014. The term "16 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. This technology is set to be replaced with 10 nm process in 2017.

Industry

Fab
Wafer

Fin Pitch
Fin Width
Fin Height
Contacted Gate Pitch
Interconnect Pitch (M1P)
SRAM bit cell

TSMC
300mm
Value^[1]	20 nm Δ
48 nm	N/A
? nm
37 nm
90 nm	1.03x
70 nm	1.09x
0.07 µm²^[2]	0.55x

TSMC

TSMC demonstrated their 256 Mebibit SRAM wafer from their 7nm HKMG FinFET process. Their chip makes use of 34% of the area of their 16 nm process demo chip counterpart.

TSMC 256Mb SRAM demo wafer^[2]

Technology	16 nm HK-MG FinFET
Metal scheme	1P7M
Supply voltage	0.85 V (core) 1.8 V (i/o)
Bit cell size	0.07 µm²
macro configs	4096x32 MUX16 258 bits/BL 272 bits/WL
Capacity	256 Mib
Test Features	Row/Column Redundancy Programmable E-fuse
Die Size	42.6 mm²

16 nm Microprocessors

PEZY
- PEZY-SC2
MediaTek
- Helio

This list is incomplete; you can help by expanding it.

16 nm Microarchitectures

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References

↑ TechInsights/Chipworks, Kevin Gibb, The ConFab 2016
↑ ^2.0 ^2.1 Chen, Yen-Huei, et al. "A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications." IEEE Journal of Solid-State Circuits 50.1 (2015): 170-177.

[1] TechInsights/Chipworks, Kevin Gibb, The ConFab 2016

[tsmc-2] 2.0 ^2.1 Chen, Yen-Huei, et al. "A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications." IEEE Journal of Solid-State Circuits 50.1 (2015): 170-177.

[1

[2

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