Latest revision as of 22:04, 20 May 2018

Semiconductor lithography processes technology

1 nm 2 nm 3 nm 5 nm 7 nm 10 nm 14 nm 16 nm 20 nm 22 nm 28 nm 32 nm 40 nm 45 nm 55 nm 65 nm 80 nm 90 nm 110 nm 130 nm 150 nm 180 nm 220 nm 240 nm 250 nm 280 nm 350 nm 500 nm 600 nm 650 nm 700 nm 750 nm 800 nm 1 µm 1.2 µm 1.3 µm 1.5 µm 2 µm 2.5 µm 3 µm 3.5 µm 5 µm 6 µm 7 µm 8 µm 10 µm 16 µm 20 µm 50 µm

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The 10 µm lithography process was the semiconductor process technology used by the major semiconductor companies during the years of 1967 and 1973. This process had an effective channel length of roughly 10 µm between the source and drain (Poly-SI channel implant). The typical wafer size for this process at companies such as Fairchild and TI was 2-inch (51 mm).

Industry[edit]

10 µm Microprocessors[edit]

• Intel
  • 4004
  • 4040
  • 8008
• National
  • IMP-4

This list is incomplete; you can help by expanding it.

Click to browse all 10 µm models

10 µm Chips[edit]

• Intel
  • 3000
• RCA
  • CD4000 Series

This list is incomplete; you can help by expanding it.

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