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The '''5 nanometer (5 nm or 50 Å) lithography process''' is a [[technology node]] semiconductor manufacturing process following the [[7 nm lithography process|7 nm process]] node. Commercial [[integrated circuit]] manufacturing using 7 nm process is set to begin sometimes around 2020. | The '''5 nanometer (5 nm or 50 Å) lithography process''' is a [[technology node]] semiconductor manufacturing process following the [[7 nm lithography process|7 nm process]] node. Commercial [[integrated circuit]] manufacturing using 7 nm process is set to begin sometimes around 2020. | ||
− | The term "5 nm" is simply a commercial name for a generation of a certain size and its technology, and '''does not''' represent any geometry of | + | The term "5 nm" is simply a commercial name for a generation of a certain size and its technology, and '''does not''' represent any geometry of the transistor. |
== Industry == | == Industry == |
Revision as of 14:00, 1 June 2017
The 5 nanometer (5 nm or 50 Å) lithography process is a technology node semiconductor manufacturing process following the 7 nm process node. Commercial integrated circuit manufacturing using 7 nm process is set to begin sometimes around 2020.
The term "5 nm" is simply a commercial name for a generation of a certain size and its technology, and does not represent any geometry of the transistor.
Industry
Process Name | |
---|---|
1st Production | |
Lithography | Lithography |
Immersion | |
Exposure | |
Wafer | Type |
Size | |
Transistor | Type |
Voltage | |
Fin | Pitch |
Width | |
Height | |
Gate Length (Lg) | |
Contacted Gate Pitch (CPP) | |
Minimum Metal Pitch (MMP) | |
SRAM bitcell | High-Perf (HP) |
High-Density (HD) | |
Low-Voltage (LV) | |
DRAM bitcell | eDRAM |
Intel | TSMC | GlobalFoundries | Samsung | ||||
---|---|---|---|---|---|---|---|
P1278? (CPU), P1279? (SoC) | |||||||
EUV | 193 nm | EUV | EUV | ||||
Yes | Yes | ||||||
SE | LELELELE | SE | SE | ||||
Bulk | Bulk | Bulk | Bulk | ||||
300 nm | 300 nm | 300 nm | 300 nm | ||||
FinFET | FinFET | GAA | |||||
Value | 10 nm Δ | Value | 10 nm Δ | Value | 10 nm Δ | Value | 7 nm Δ |
N/A | |||||||
~44 nm | 0.81x | ||||||
~32 nm | 0.84x | ||||||
Samsung
On May 24 2017 Samsung announced they will be switching to a transistor they call Multi-Bridge-Channel FET (MBCFET), an extension of a Gate-all-around (GAA) FET. This is planned for somewhere around the 5nm node but the exact timeline or specification is currently unknown.
5 nm Microprocessors
This list is incomplete; you can help by expanding it.
5 nm Microarchitectures
This list is incomplete; you can help by expanding it.
References
- TSMC, Estimated at TSMC Technology Symposium, San Jose, March 15, 2017