Revision as of 10:03, 5 April 2017

Semiconductor lithography processes technology

1 nm • 18A 2 nm • 3 nm 5 nm • 7 nm 10 nm • 12 nm 14 nm • 16 nm 20 nm • 22 nm 28 nm • 32 nm 40 nm • 45 nm 55 nm • 65 nm 80 nm • 90 nm 110 nm • 130 nm 150 nm • 180 nm 220 nm • 240 nm 250 nm • 280 nm 350 nm • 500 nm 600 nm • 650 nm 700 nm • 750 nm 800 nm 1 µm • 1.2 µm 1.3 µm • 1.5 µm 2 µm • 2.5 µm 3 µm • 3.5 µm 5 µm • 6 µm 7 µm • 8 µm 10 µm • 16 µm 20 µm • 50 µm

v · d · e

The 16 nanometer (16 nm) lithography process is a full node semiconductor manufacturing process following the 20 nm process stopgap. Commercial integrated circuit manufacturing using 16 nm process began in 2014. The term "16 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. This technology is set to be replaced with 10 nm process in 2017.

Industry

TSMC

TSMC demonstrated their 128 Mebibit SRAM wafer from their 16 nm HKMG FinFET process at the 2014 IEEE ISSCC.

TSMC 128 Mib SRAM demo 16 nm wafer
Technology 16 nm HK-MG FinFET Metal scheme 1 Poly / 7 Metal Supply voltage 0.85 V (core) 1.8 V (i/o) Bit cell size 0.07 µm² macro configs 4096x32 MUX16 258 bits/BL 272 bits/WL Capacity 128 Mib Test Features Row/Column Redundancy Programmable E-fuse Die Size 42.6 mm²

16 nm Microprocessors

• PEZY
  • PEZY-SC2
• MediaTek
  • Helio

This list is incomplete; you can help by expanding it.

16 nm Microarchitectures

This list is incomplete; you can help by expanding it.

References

• Chen, Yen-Huei, et al. "A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications." IEEE Journal of Solid-State Circuits 50.1 (2015): 170-177.
• Wu, Shien-Yang, et al. "A 16nm FinFET CMOS technology for mobile SoC and computing applications." Electron Devices Meeting (IEDM), 2013 IEEE International. IEEE, 2013.
• TechInsights/Chipworks, Kevin Gibb, The ConFab 2016