From WikiChip
Difference between revisions of "10 nm lithography process"
(→10 nm System on Chips) |
|||
Line 44: | Line 44: | ||
== 10 nm System on Chips== | == 10 nm System on Chips== | ||
* MediaTek {{mediatek|Helio X30}} | * MediaTek {{mediatek|Helio X30}} | ||
+ | * Qualcomm {{qualcomm|Snapdragon 830}} | ||
{{expand list}} | {{expand list}} | ||
Revision as of 08:47, 31 July 2016
The 10 nanometer (10 nm) lithography process is a full node semiconductor manufacturing process following the 14 nm process stopgap. The term "10 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. Commercial integrated circuit manufacturing using 10 nm process is set to begin in 2017. This technology is set to be replaced by 7 nm process 2019.
Industry
Fab |
---|
Process Name |
1st Production |
|
Fin Pitch |
Fin Width |
Fin Height |
Contacted Gate Pitch |
Interconnect Pitch (M1P) |
SRAM bit cell (HP) |
SRAM bit cell (HD) |
Intel | Samsung | TSMC | |||
---|---|---|---|---|---|
P1274 | |||||
Value | 14 nm Δ | Value | 14 nm Δ | Value | 16 nm Δ |
? nm | ?x | ? nm | ?x | ? nm | ?x |
? nm | ?x | ? nm | ?x | ? nm | ?x |
? nm | ?x | ? nm | ?x | ? nm | ?x |
55 nm | 0.78x | 64 nm | 0.82x | 70 nm | 0.78x |
38 nm | 0.74x | 48 nm | 0.75x | 46 nm | 0.72x |
? µm2 | ?x | 0.049 µm2 | 0.61x | ? µm2 | ?x |
? µm2 | ?x | 0.040 µm2 | 0.63x | ? µm2 | ?x |
10 nm Microprocessors
This list is incomplete; you can help by expanding it.
10 nm System on Chips
- MediaTek Helio X30
- Qualcomm Snapdragon 830
This list is incomplete; you can help by expanding it.
10 nm Microarchitectures
- Intel
This list is incomplete; you can help by expanding it.