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Difference between revisions of "10 nm lithography process"
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Revision as of 04:55, 24 April 2016
The 10 nm lithography process is a full node semiconductor manufacturing process following the 14 nm process stopgap. Commercial integrated circuit manufacturing using 10 nm process is set to begin in 2017. This technology is set to be replaced by 7 nm process 2019.
Industry
Fab |
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Fin Pitch |
Fin Width |
Fin Height |
Contacted Gate Pitch |
Interconnect Pitch (M1P) |
SRAM bit cell (HP) |
SRAM bit cell (HD) |
Intel | Samsung | TSMC | |||
---|---|---|---|---|---|
Value | 14 nm Δ | Value | 14 nm Δ | Value | 16 nm Δ |
? nm | ?x | ? nm | ?x | ? nm | ?x |
? nm | ?x | ? nm | ?x | ? nm | ?x |
? nm | ?x | ? nm | ?x | ? nm | ?x |
55 nm | 0.78x | 64 nm | 0.82x | 70 nm | 0.78x |
38 nm | 0.74x | 48 nm | 0.75x | 46 nm | 0.72x |
? µm2 | ?x | 0.049 µm2 | 0.61x | ? µm2 | ?x |
? µm2 | ?x | 0.040 µm2 | 0.63x | ? µm2 | ?x |
10 nm Microprocessors
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10 nm System on Chips
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10 nm Microarchitectures
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