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Difference between revisions of "180 nm lithography process"
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Revision as of 02:51, 24 April 2016
The 180 nm lithography process is a full node semiconductor manufacturing process following the 220 nm process stopgap. Commercial integrated circuit manufacturing using 180 nm process began in late 1998. This technology was replaced by with 150 nm process (HN) in 2000 and 130 nm process (FN) in 2001.
Contents
Industry
The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects.
Intel
- 200mm (8-inch) wafers
Measurement | Scaling from 250 nm | |
Contacted Gate Pitch | 480 nm | |
Interconnect Pitch (M1P) | 500 nm | |
SRAM bit cell | 5.59 µm2 | .56x |
180 nm Microprocessors
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180 nm System on Chips
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180 nm Microarchitectures
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