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Difference between revisions of "90 nm lithography process"
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Revision as of 20:19, 23 April 2016
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The 90 nm lithography process is a full node semiconductor manufacturing process following the 110 nm process stopgap. Commercial integrated circuit manufacturing using 90 nm process began in 2004. This technology was superseded by the 80 nm process (HN) / 65 nm process (FN) in 2006.
Contents
Industry
Intel
Measurement | Scaling from 130 nm | |
Contacted Gate Pitch | 260 nm | 0.82x |
Interconnect Pitch (M1P) | 220 nm | 0.63x |
SRAM bit cell | 1.0 µm2 | 0.50x |
90 nm Microprocessors
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90 nm System on Chips
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90 nm Microarchitectures
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