Semiconductor & Computer Engineering
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Difference between revisions of "22 nm lithography process"
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| [[SRAM]] bit cell || 0.1080 µm<sup>2</sup> || | | [[SRAM]] bit cell || 0.1080 µm<sup>2</sup> || | ||
| + | |} | ||
| + | |||
| + | {| class="wikitable" | ||
| + | ! colspan="6" | SoC Interconnect Design Rules | ||
| + | |- | ||
| + | ! Layer !! Pitch !! Process !! Dielectric Materials !! [[CPU]] !! [[SoC]] | ||
| + | |- | ||
| + | | Fin || 60 nm || - || - || Fin || Fin | ||
| + | |- | ||
| + | | Contact || 90 nm || SAC || - || Contact || Contact | ||
| + | |- | ||
| + | | M1 || 90 nm || SAV || ULK CDO || M1 || M1 | ||
| + | |- | ||
| + | | MT - 1x || 80 nm || SAV || ULK CDO || M2/M3 || 2-6 layers | ||
| + | |- | ||
| + | | MT - 1.4x || 112 nm || SAV || ULK CDO || M4 || Semi-global | ||
| + | |- | ||
| + | | MT - 2x || 160 nm || SAV || ULK CDO || M5 || Semi-global | ||
| + | |- | ||
| + | | MT - 3x || 240 nm || SAV || ULK CDO || M6 || Global Routing | ||
| + | |- | ||
| + | | MT - 4x || 320 nm<br>360 nm || Via First || LK CDO || M7/M8 || Global Routing | ||
| + | |- | ||
| + | | MT - TOP || 14 µm || Plate Up || Polymer || M9 || Top Metal | ||
|} | |} | ||
Revision as of 18:21, 23 April 2016
Semiconductor lithography processes technology
The 22 nm lithography process is a full node semiconductor manufacturing process following the 28 nm process stopgap. Commercial integrated circuit manufacturing using 22 nm process began in 2008 for memory and 2012 for MPUs. This technology was replaced by with 20 nm process (HN) in 2014 and 16 nm process (FN) in late 2015.
Contents
Industry
Intel
22 nm was Intel's first generation of Tri-gate FinFET transistors.
| Measurement | Scaling from 32 nm | |
| Fin Pitch | 60 nm | |
| Contacted Gate Pitch | 90 nm | 0.80x |
| Interconnect Pitch (M1P) | 80 nm | 0.71x |
| SRAM bit cell | 0.1080 µm2 |
| SoC Interconnect Design Rules | |||||
|---|---|---|---|---|---|
| Layer | Pitch | Process | Dielectric Materials | CPU | SoC |
| Fin | 60 nm | - | - | Fin | Fin |
| Contact | 90 nm | SAC | - | Contact | Contact |
| M1 | 90 nm | SAV | ULK CDO | M1 | M1 |
| MT - 1x | 80 nm | SAV | ULK CDO | M2/M3 | 2-6 layers |
| MT - 1.4x | 112 nm | SAV | ULK CDO | M4 | Semi-global |
| MT - 2x | 160 nm | SAV | ULK CDO | M5 | Semi-global |
| MT - 3x | 240 nm | SAV | ULK CDO | M6 | Global Routing |
| MT - 4x | 320 nm 360 nm |
Via First | LK CDO | M7/M8 | Global Routing |
| MT - TOP | 14 µm | Plate Up | Polymer | M9 | Top Metal |
22 nm Microprocessors
- Intel
This list is incomplete; you can help by expanding it.
22 nm System on Chips
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22 nm Microarchitectures
- Intel:
This list is incomplete; you can help by expanding it.