Semiconductor & Computer Engineering
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== Industry == | == Industry == | ||
| − | The 22 nm became Intel's first generation of Tri-gate [[FinFET]] transistors and the first such transistor on the market. This process became 3rd generation high-k + metal gate transistors for Intel. | + | The 22 nm became Intel's first generation of Tri-gate [[FinFET]] transistors and the first such transistor on the market. This process became 3rd generation high-k + metal gate transistors for Intel. In 2017 Intel announce the introduction of a new process "22FFL" specifically for low power IOT and mobile products for their custom foundry. |
{{scrolling table/top|style=text-align: right; | first=Fab | {{scrolling table/top|style=text-align: right; | first=Fab | ||
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{{scrolling table/mid}} | {{scrolling table/mid}} | ||
|- | |- | ||
| − | ! colspan=" | + | ! colspan="4" | [[Intel]] !! colspan="2" | Common Platform<info>[[IBM]] / [[GlobalFoundries]] / [[AMD]] / [[Freescale]] / [[STMicroelectronics]] / [[Toshiba]] / CNSE</info> |
|- style="text-align: center;" | |- style="text-align: center;" | ||
| − | | colspan="2" | P1270 (CPU) / P1271 (SoC) || colspan="2" | | + | | colspan="2" | P1270 (CPU) / P1271 (SoC) || colspan="2" | 22FFL || colspan="2" | |
|- style="text-align: center;" | |- style="text-align: center;" | ||
| − | | colspan=" | + | | colspan="4" | FinFET || colspan="2" | Planar |
|- style="text-align: center;" | |- style="text-align: center;" | ||
| − | | colspan="2" | 2011 || colspan="2" | 2012 | + | | colspan="2" | 2011 || colspan="2" | 2017 || colspan="2" | 2012 |
|- style="text-align: center;" | |- style="text-align: center;" | ||
| − | | colspan=" | + | | colspan="8" | 300 mm |
|- | |- | ||
| − | ! Value !! [[32 nm]] Δ !! Value !! [[32 nm]] Δ | + | ! Value !! [[32 nm]] Δ !! Value !! [[32 nm]] Δ !! Value !! [[32 nm]] Δ |
|- | |- | ||
| − | | 60 nm || colspan=" | + | | 60 nm || rowspan="3" style="text-align: center;" | N/A || 45 nm || rowspan="8" style="text-align: center;" | N/A || colspan="2" rowspan="3" style="text-align: center;" | N/A |
|- | |- | ||
| − | | 8 nm | + | | 8 nm || ? nm |
|- | |- | ||
| − | | 34 nm | + | | 34 nm || ? nm |
|- | |- | ||
| − | | 90 nm || 0.80x || 100 nm || 0.79x | + | | 90 nm || 0.80x || 108 nm || 100 nm || 0.79x |
|- | |- | ||
| − | | 80 nm || 0.71x || 80 nm || ?x | + | | 80 nm || 0.71x || 90 nm || 80 nm || ?x |
|- | |- | ||
| − | | 0.1080 | + | | 0.1080 µm² || 0.63x || ? µm² || 0.1 µm² || 0.67x |
|- | |- | ||
| − | | 0.092 | + | | 0.092 µm² || ?x || 0.88 µm² || ? µm² || ?x |
|- | |- | ||
| − | | || || 0.026 | + | | || || || 0.026 µm² || 0.67x |
{{scrolling table/end}} | {{scrolling table/end}} | ||
=== Intel === | === Intel === | ||
Revision as of 05:52, 29 March 2017
Semiconductor lithography processes technology
The 22 nanometer (22 nm) lithography process is a full node semiconductor manufacturing process following the 28 nm process stopgap. The term "22 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. Commercial integrated circuit manufacturing using 22 nm process began in 2008 for memory and 2012 for MPUs. This technology was replaced by with 20 nm process (HN) in 2014 and 16 nm process (FN) in late 2015.
Industry
The 22 nm became Intel's first generation of Tri-gate FinFET transistors and the first such transistor on the market. This process became 3rd generation high-k + metal gate transistors for Intel. In 2017 Intel announce the introduction of a new process "22FFL" specifically for low power IOT and mobile products for their custom foundry.
| Fab |
|---|
| Process Name |
| 1st Production |
| Transistor |
| Wafer |
| |
| Fin Pitch |
| Fin Width |
| Fin Height |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell (HP) |
| SRAM bit cell (HD) |
| DRAM bit cell |
| Intel | Common Platform | ||||||
|---|---|---|---|---|---|---|---|
| P1270 (CPU) / P1271 (SoC) | 22FFL | ||||||
| FinFET | Planar | ||||||
| 2011 | 2017 | 2012 | |||||
| 300 mm | |||||||
| Value | 32 nm Δ | Value | 32 nm Δ | Value | 32 nm Δ | ||
| 60 nm | N/A | 45 nm | N/A | N/A | |||
| 8 nm | ? nm | ||||||
| 34 nm | ? nm | ||||||
| 90 nm | 0.80x | 108 nm | 100 nm | 0.79x | |||
| 80 nm | 0.71x | 90 nm | 80 nm | ?x | |||
| 0.1080 µm² | 0.63x | ? µm² | 0.1 µm² | 0.67x | |||
| 0.092 µm² | ?x | 0.88 µm² | ? µm² | ?x | |||
| 0.026 µm² | 0.67x | ||||||
Intel
| Intel 22nm SoC Interconnect Design Rules | ||||||
|---|---|---|---|---|---|---|
| Layer | Pitch | Process | Dielectric Materials | CPU | SoC | Image |
| Fin | 60 nm | - | - | Fin | Fin | 
|
| Contact | 90 nm | SAC | - | Contact | Contact | |
| M1 | 90 nm | SAV | ULK CDO | M1 | M1 | |
| MT - 1x | 80 nm | SAV | ULK CDO | M2/M3 | 2-6 layers | |
| MT - 1.4x | 112 nm | SAV | ULK CDO | M4 | Semi-global | |
| MT - 2x | 160 nm | SAV | ULK CDO | M5 | Semi-global | |
| MT - 3x | 240 nm | SAV | ULK CDO | M6 | Global Routing | |
| MT - 4x | 320 nm 360 nm |
Via First | LK CDO | M7/M8 | Global Routing | |
| MT - TOP | 14 µm | Plate Up | Polymer | M9 | Top Metal | |
Find models
Click to browse all 22 nm MPU models
22 nm Microprocessors
This list is incomplete; you can help by expanding it.
Click to browse all 22 nm MPU models
22 nm Microarchitectures
- Intel:
This list is incomplete; you can help by expanding it.