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    Difference between revisions of "28 nm lithography process"    
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* Intel (Fab'ed by [[TSMC]])  | * Intel (Fab'ed by [[TSMC]])  | ||
** {{intel|Atom x3}}  | ** {{intel|Atom x3}}  | ||
| + | * MediaTek  | ||
| + | ** {{mediatek|Helio}}  | ||
* Phytium  | * Phytium  | ||
** {{phytium|FT-1500A}}  | ** {{phytium|FT-1500A}}  | ||
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** {{amd|microarchitectures/steamroller|Steamroller}}  | ** {{amd|microarchitectures/steamroller|Steamroller}}  | ||
** {{amd|microarchitectures/excavator|Excavator}}  | ** {{amd|microarchitectures/excavator|Excavator}}  | ||
| + | * ARM Holdings  | ||
| + | ** {{armh|Cortex-A53|l=arch}}  | ||
{{expand list}}  | {{expand list}}  | ||
Revision as of 02:46, 4 December 2016
The 28 nanometer (28 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.
Industry
| Fab | 
|---|
| Wafer | 
|  | 
| Contacted Gate Pitch | 
| Interconnect Pitch (M1P) | 
| SRAM bit cell (HD) | 
| SRAM bit cell (LP) | 
| SRAM bit cell (HC) | 
| Samsung | TSMC | GlobalFoundries | STMicroelectronics | UMC | |||||
|---|---|---|---|---|---|---|---|---|---|
| 300mm | |||||||||
| Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ | 
| 90 nm | 0.70x | 117 nm | 0.72x | ?nm | ?x | ?nm | ?x | ?nm | ?x | 
| 96 nm | 0.82x | ?nm | ?x | ?nm | ?x | ?nm | ?x | ?nm | ?x | 
| 0.120 µm2 | ?x | 0.127 µm2 | 0.52x | 0.120 µm2 | ?x | 0.120 µm2 | ?x | 0.124 µm2 | ?x | 
| 0.155 µm2 | 0.197 µm2 | ?x | ? µm2 | ?x | |||||
| 0.152 µm2 | ?x | ||||||||
28 nm Microprocessors
This list is incomplete; you can help by expanding it.
28 nm Microarchitectures
- AMD
 - ARM Holdings
 
This list is incomplete; you can help by expanding it.