Revision as of 00:41, 24 February 2017

Semiconductor lithography processes technology

1 nm 2 nm 3 nm 5 nm 7 nm 10 nm 14 nm 16 nm 20 nm 22 nm 28 nm 32 nm 40 nm 45 nm 55 nm 65 nm 80 nm 90 nm 110 nm 130 nm 150 nm 180 nm 220 nm 240 nm 250 nm 280 nm 350 nm 500 nm 600 nm 650 nm 700 nm 750 nm 800 nm 1 µm 1.2 µm 1.3 µm 1.5 µm 2 µm 2.5 µm 3 µm 3.5 µm 5 µm 6 µm 7 µm 8 µm 10 µm 16 µm 20 µm 50 µm

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The 150 nanometer (150 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 180 nm and 130 nm processes. Commercial integrated circuit manufacturing using 55 nm process began in early 2000s. This technology superseded by commercial 130 nm, 110 nm, and 90 nm processes.

Industry

On December 16, 1999, Samsung announced the development of a $1.8B Line 10, a 1M meter² site in Hwasung-gun, Kyonggi Province. Line 10 was dedicated for the production of 128 MiB, 256 MiB and Rambus DRAMs on a 150 nm process. Line 10 opened in the third quarter of 2000 producing 16,000 200 mm wafers per month going into full capacity in the in the first quarter of 2001 producing 32,000 wafers a month.

150 nm Microprocessors

• Cyrix
  • Cyrix III
• HAL (Fujitsu)
  • SPARC64 GP

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