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Difference between revisions of "20 nm lithography process"
m (→Samsung) |
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Line 11: | Line 11: | ||
| Contacted Gate Pitch || 64 nm || 0.71x | | Contacted Gate Pitch || 64 nm || 0.71x | ||
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− | | Interconnect Pitch (M1P) || 64 nm || 0. | + | | Interconnect Pitch (M1P) || 64 nm || 0.67x |
|- | |- | ||
| [[SRAM]] bit cell || ? µm<sup>2</sup> || ?x | | [[SRAM]] bit cell || ? µm<sup>2</sup> || ?x |
Revision as of 21:47, 23 April 2016
Semiconductor lithography processes technology |
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The 20 nm lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 22 nm and 16 nm processes. Commercial integrated circuit manufacturing using 20 nm process began in 2014. This technology superseded by commercial 16 nm process.
Contents
Industry
Samsung
Measurement | Scaling from 28 nm | |
Contacted Gate Pitch | 64 nm | 0.71x |
Interconnect Pitch (M1P) | 64 nm | 0.67x |
SRAM bit cell | ? µm2 | ?x |
20 nm Microprocessors
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20 nm System on Chips
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20 nm Microarchitectures
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