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Difference between revisions of "16 nm lithography process"
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{{lithography processes}} | {{lithography processes}} | ||
The '''16 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[20 nm lithography process|20 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 16 nm process began in 2014. This technology is set to replaced by [[14 nm lithography process|14 nm process]] (HN) (2014) and [[10 nm lithography process|10 nm process]] (FN) in 2017. | The '''16 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[20 nm lithography process|20 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 16 nm process began in 2014. This technology is set to replaced by [[14 nm lithography process|14 nm process]] (HN) (2014) and [[10 nm lithography process|10 nm process]] (FN) in 2017. | ||
+ | |||
+ | == Industry == | ||
+ | |||
+ | === TSMC === | ||
+ | {| class="wikitable" | ||
+ | |- | ||
+ | | || Measurement | ||
+ | |- | ||
+ | | Fin Pitch || 48 nm | ||
+ | |- | ||
+ | | Contacted Gate Pitch || 90 nm | ||
+ | |- | ||
+ | | Interconnect Pitch (M1P) || 64 nm | ||
+ | |- | ||
+ | | [[SRAM]] bit cell || 0.07 µm<sup>2</sup> | ||
+ | |} | ||
== 16 nm Microprocessors== | == 16 nm Microprocessors== |
Revision as of 22:24, 23 April 2016
The 16 nm lithography process is a full node semiconductor manufacturing process following the 20 nm process stopgap. Commercial integrated circuit manufacturing using 16 nm process began in 2014. This technology is set to replaced by 14 nm process (HN) (2014) and 10 nm process (FN) in 2017.
Contents
Industry
TSMC
Measurement | |
Fin Pitch | 48 nm |
Contacted Gate Pitch | 90 nm |
Interconnect Pitch (M1P) | 64 nm |
SRAM bit cell | 0.07 µm2 |
16 nm Microprocessors
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16 nm System on Chips
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16 nm Microarchitectures
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