Semiconductor & Computer Engineering
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Difference between revisions of "800 nm lithography process"
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Latest revision as of 22:04, 20 May 2018
Semiconductor lithography processes technology
The 800 nanometer (800 nm) lithography process was a semiconductor manufacturing process used by a variety of integrated circuit manufacturers in the late 1980s and early 1990s. A "0.8 µm process" refers to a process which has a gate length of 0.8 µm. This process was later replaced by 650 nm, 600 nm, and 500 nm processes.
Industry[edit]
| Fab |
|---|
| Process Name |
| 1st Production |
| Voltage |
| Metal Layers |
| |
| Gate Length |
| Interconnect Pitch (M1P) |
| SRAM bit cell |
| Intel (BICMOS) | Intel (CHMOS V) | TI (CMOS) | TI (BiCMOS) | Cypress | AMD | Motorola | NEC | HP | HP | National (ASIC BiCMOS) | National (Memory BiCMOS) | Hitachi | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| P650 | CMOS26B | CMOS26G | ABiC IV | BiCMOS III | |||||||||
| 1991 | 1989 | 1991 | 1991 | 1989 | 1989 | 1991 | 1991 | 1991 | 1990 | 1990 | |||
| 5 V | |||||||||||||
| 3 | 2 | 2 | 2 | 3 | 2 | 3 | 4 | 2 | 2 | ||||
| Value | Value | 1 µm Δ | Value | Value | Value | Value | Value | Value | Value | Value | Value | Value | Value |
| ? nm | ? nm | ?x | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | 0.8 µm |
| ? nm | ? nm | ?x | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | 2.5 µm | 1.8 µm | 1.4 µm |
| ? µm² | 111 µm² | 0.50x | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | 100 µm² | ? µm² | ? µm² |
800 nm Microprocessors[edit]
- AMD
- Cypress
- HP
- Intel
- MIPS
- Motorola
- Qualcomm
- Sun
- microSPARC I, 1992
- SuperSPARC II
This list is incomplete; you can help by expanding it.
800 nm System on chips[edit]
- AMD
800 nm Microarchitectures[edit]
This list is incomplete; you can help by expanding it.