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Difference between revisions of "800 nm lithography process"
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− | The '''800 nanometer (800 nm) lithography process''' was a semiconductor manufacturing process used by a variety of [[integrated circuit]] manufacturers in early 1990s. This process was later replaced by [[650 nm]], [[600 nm]], and [[500 nm]] processes. | + | The '''800 nanometer (800 nm) lithography process''' was a semiconductor manufacturing process used by a variety of [[integrated circuit]] manufacturers in the late 1980s and early 1990s. A '''"0.8 µm process"''' refers to a process which has a gate length of 0.8 µm. This process was later replaced by [[650 nm]], [[600 nm]], and [[500 nm]] processes. |
== Industry == | == Industry == | ||
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|Process Name | |Process Name | ||
|1st Production | |1st Production | ||
+ | |Voltage | ||
|Metal Layers | |Metal Layers | ||
| | | | ||
− | | | + | |Gate Length |
|Interconnect Pitch (M1P) | |Interconnect Pitch (M1P) | ||
|SRAM bit cell | |SRAM bit cell | ||
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{{scrolling table/mid}} | {{scrolling table/mid}} | ||
|- | |- | ||
− | ! [[Intel]] (BICMOS) !! colspan="2" | [[Intel]] (CHMOS V) !! [[TI]] (CMOS) !! [[TI]] (BiCMOS) !! [[Cypress]] !! [[AMD]] !! [[Motorola]] !! [[NEC]] !! [[HP]] !! [[HP]] !! [[National Semiconductor|National]] (ASIC BiCMOS) !! [[National Semiconductor|National]] (Memory BiCMOS) | + | ! [[Intel]] (BICMOS) !! colspan="2" | [[Intel]] (CHMOS V) !! [[TI]] (CMOS) !! [[TI]] (BiCMOS) !! [[Cypress]] !! [[AMD]] !! [[Motorola]] !! [[NEC]] !! [[HP]] !! [[HP]] !! [[National Semiconductor|National]] (ASIC BiCMOS) !! [[National Semiconductor|National]] (Memory BiCMOS) !! [[Hitachi]] |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | || colspan="2" | P650 || || || || || || || CMOS26B || CMOS26G || ABiC IV || BiCMOS III | + | | || colspan="2" | P650 || || || || || || || CMOS26B || CMOS26G || ABiC IV || BiCMOS III || |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | 1991 || colspan="2" | 1989 || 1991 || 1991 || 1989 || 1989 || 1991 || 1991 || 1991 || || 1990 || 1990 | + | | 1991 || colspan="2" | 1989 || 1991 || 1991 || 1989 || 1989 || 1991 || 1991 || 1991 || || 1990 || 1990 || |
+ | |- style="text-align: center;" | ||
+ | | || || || || || || || || || || || || || 5 V | ||
|- | |- | ||
− | | || colspan="2" | 3 || 2 || 2 || 2 || || 3 || 2 || 3 || || 4 || 2 | + | | || colspan="2" | 3 || 2 || 2 || 2 || || 3 || 2 || 3 || || 4 || 2 || 2 |
|- | |- | ||
− | ! Value !! Value !! [[1 µm]] Δ !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value | + | ! Value !! Value !! [[1 µm]] Δ !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value |
|- | |- | ||
− | | ? nm || ? nm || ?x || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm | + | | ? nm || ? nm || ?x || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || 0.8 µm |
|- | |- | ||
− | | ? nm || ? nm || ?x || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || 2.5 µm || 1.8 µm | + | | ? nm || ? nm || ?x || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || 2.5 µm || 1.8 µm || 1.4 µm |
|- | |- | ||
− | | ? µm² || 111 µm² || 0.50x || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || 100 µm² || ? µm² | + | | ? µm² || 111 µm² || 0.50x || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || 100 µm² || ? µm² || ? µm² |
{{scrolling table/end}} | {{scrolling table/end}} | ||
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** {{intel|80486|l=arch}} (later models) | ** {{intel|80486|l=arch}} (later models) | ||
** {{intel|80186|l=arch}} (embedded [[IP cores]] only) | ** {{intel|80186|l=arch}} (embedded [[IP cores]] only) | ||
+ | * ARM | ||
+ | ** {{armh|ARM6|l=arch}} | ||
{{expand list}} | {{expand list}} | ||
− | [[ | + | [[category:lithography]] |
Latest revision as of 23:04, 20 May 2018
The 800 nanometer (800 nm) lithography process was a semiconductor manufacturing process used by a variety of integrated circuit manufacturers in the late 1980s and early 1990s. A "0.8 µm process" refers to a process which has a gate length of 0.8 µm. This process was later replaced by 650 nm, 600 nm, and 500 nm processes.
Industry[edit]
Fab |
---|
Process Name |
1st Production |
Voltage |
Metal Layers |
|
Gate Length |
Interconnect Pitch (M1P) |
SRAM bit cell |
Intel (BICMOS) | Intel (CHMOS V) | TI (CMOS) | TI (BiCMOS) | Cypress | AMD | Motorola | NEC | HP | HP | National (ASIC BiCMOS) | National (Memory BiCMOS) | Hitachi | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
P650 | CMOS26B | CMOS26G | ABiC IV | BiCMOS III | |||||||||
1991 | 1989 | 1991 | 1991 | 1989 | 1989 | 1991 | 1991 | 1991 | 1990 | 1990 | |||
5 V | |||||||||||||
3 | 2 | 2 | 2 | 3 | 2 | 3 | 4 | 2 | 2 | ||||
Value | Value | 1 µm Δ | Value | Value | Value | Value | Value | Value | Value | Value | Value | Value | Value |
? nm | ? nm | ?x | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | 0.8 µm |
? nm | ? nm | ?x | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | 2.5 µm | 1.8 µm | 1.4 µm |
? µm² | 111 µm² | 0.50x | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | 100 µm² | ? µm² | ? µm² |
800 nm Microprocessors[edit]
- AMD
- Cypress
- HP
- Intel
- MIPS
- Motorola
- Qualcomm
- Sun
- microSPARC I, 1992
- SuperSPARC II
This list is incomplete; you can help by expanding it.
800 nm System on chips[edit]
- AMD
800 nm Microarchitectures[edit]
This list is incomplete; you can help by expanding it.