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{{lithography processes}}
 
{{lithography processes}}
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The '''90 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[110 nm lithography process|110 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 90 nm process began in 2004. This technology was superseded by the [[80 nm lithography process|80 nm process]] (HN) / [[65 nm lithography process|65 nm process]] (FN) in 2006.
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The '''90 nanometer (90 nm) lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[110 nm lithography process|110 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 90 nm process began in 2003. This technology was superseded by the [[80 nm lithography process|80 nm process]] (HN) / [[65 nm lithography process|65 nm process]] (FN) in 2006.
  
 
== Industry ==
 
== Industry ==
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Introduced in late 2002, Intel's 90 nm process became the first volume production to introduce [[strained silicon]] transistors.
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=== Intel ===
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{{scrolling table/top|style=text-align: right; | first=Fab
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* 300mm (12-inch) wafers
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|Process Name
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{| class="wikitable"
+
|1st Production
 +
|Type
 +
|Wafer
 +
|Metal Layers
 +
| 
 +
|Contacted Gate Pitch
 +
|Interconnect Pitch (M1P)
 +
|SRAM bit cell
 +
|DRAM bit cell
 +
}}
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{{scrolling table/mid}}
 +
|-
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! colspan="2" | [[Intel]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[Samsung]] !! colspan="2" | [[Fujitsu]] || colspan="2" | [[IBM]] / [[Toshiba]] / [[Sony]] / [[AMD]] / [[Chartered]] !! colspan="2" | [[Motorola]] !! colspan="2" | [[TI]]
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|- style="text-align: center;"
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| colspan="2" | P1262 || colspan="2" |  || colspan="2" |  || colspan="2" | CS-100 / CS-101 || colspan="2" |  || colspan="2" |  HiPerMOS 8 || colspan="2" | 
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|- style="text-align: center;"
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| colspan="2" | 2002 || colspan="2" | 2003 || colspan="2" | 2003 || colspan="2" | 2004 || colspan="2" | 2003 || colspan="2" | 2004 || colspan="2" | 2005
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|- style="text-align: center;"
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| colspan="8" | Bulk || colspan="4" | PDSOI || colspan="2" | Bulk
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|- style="text-align: center;"
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| colspan="14" | 300mm
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|- style="text-align: center;"
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| colspan="2" | 7 || colspan="2" |  || colspan="2" |  || colspan="2" | 10 || colspan="2" |  || colspan="2" | || colspan="2" | 9
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|-
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! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ !! Value !! [[130 nm]] Δ
 
|-
 
|-
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| || Measurement || Scaling from [[130 nm]]
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| 260 nm || 0.82x || 240 nm || 0.77x || 245 nm || 0.70x || ? nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x
 
|-
 
|-
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| Contacted Gate Pitch || 260 nm || 0.82x
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| 220 nm || 0.63x || 240 nm || 0.71x || 245 nm || 0.70x || ? nm || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x
 
|-
 
|-
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| Interconnect Pitch (M1P) || 220 nm || 0.63x
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| 1.0 µm² || 0.50x || 0.999 µm² || 0.47x || 0.999 µm² || ?x || 1.07 µm² || 0.54x || 0.999 µm² || ?x || ? µm² || ?x || ? µm² || ?x
 
|-
 
|-
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| [[SRAM]] bit cell || 1.0 µm<sup>2</sup> || 0.50x
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| || ||  || || 0.275 µm² || || || || 0.19 µm² || ?x || || || ||
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|}
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{{scrolling table/end}}
  
 
== 90 nm Microprocessors==
 
== 90 nm Microprocessors==
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* AMD
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** {{amd|Athlon 64}}
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** {{amd|Athlon 64 X2}}
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** {{amd|FX}}
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** {{amd|Opteron}}
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** {{amd|Turion 64}}
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** {{amd|Turion 64 X2}}
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* Cavium
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** {{cavium|OCTEON Plus}}
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* HAL (Fujitsu)
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** {{hal|SPARC64 V}}
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* IBM
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** {{ibm|PowerPC 970}}
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* Loongson
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** {{loongson|Godson 2}}
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* Qualcomm
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** {{qualcomm|MSM6xxx}}
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* Sun
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** {{sun|UltraSPARC T1}}
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* Intel
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** {{intel|Pentium 4 Extreme Edition}}
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** {{intel|Pentium M}}
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** {{intel|Pentium D}}
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** {{intel|EP80579}}
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* STMicroelectronics
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** STM32 F4
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** STM32 F7
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** STM32 G0
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** STM32 G4
 
{{expand list}}
 
{{expand list}}
  
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== 90 nm System on Chips==
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== 90 nm Microarchitectures ==
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* AMD
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** {{amd|K8|l=arch}}
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* ARM
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** {{armh|ARM7|l=arch}}
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* IBM
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** {{ibm|z9|l=arch}}
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* Intel
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** {{intel|Pentium M|l=arch}}
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* VIA Technologies
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** {{via|Esther|l=arch}}
 
{{expand list}}
 
{{expand list}}
  
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== 90 nm Microarchitectures ==
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== Documents ==
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{{expand list}}
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* [[:File:samsung foundry - 45, 65, 90 (August, 2007).pdf|Samsung foundry - 45 nm, 65 nm, 90 nm guide (August, 2007)]]
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[[category:lithography]]

Latest revision as of 02:09, 17 August 2023

basic wafer drawing.svg Semiconductor lithography processes technology
v · d · e

The 90 nanometer (90 nm) lithography process is a full node semiconductor manufacturing process following the 110 nm process stopgap. Commercial integrated circuit manufacturing using 90 nm process began in 2003. This technology was superseded by the 80 nm process (HN) / 65 nm process (FN) in 2006.

Industry[edit]

Introduced in late 2002, Intel's 90 nm process became the first volume production to introduce strained silicon transistors.

Fab
Process Name​
1st Production​
Type​
Wafer​
Metal Layers​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell​
DRAM bit cell
Intel TSMC Samsung Fujitsu IBM / Toshiba / Sony / AMD / Chartered Motorola TI
P1262 CS-100 / CS-101 HiPerMOS 8
2002 2003 2003 2004 2003 2004 2005
Bulk PDSOI Bulk
300mm
7 10 9
Value 130 nm Δ Value 130 nm Δ Value 130 nm Δ Value 130 nm Δ Value 130 nm Δ Value 130 nm Δ Value 130 nm Δ
260 nm 0.82x 240 nm 0.77x 245 nm 0.70x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x
220 nm 0.63x 240 nm 0.71x 245 nm 0.70x  ? nm  ?x  ? nm  ?x  ? nm  ?x  ? nm  ?x
1.0 µm² 0.50x 0.999 µm² 0.47x 0.999 µm²  ?x 1.07 µm² 0.54x 0.999 µm²  ?x  ? µm²  ?x  ? µm²  ?x
0.275 µm² 0.19 µm²  ?x

90 nm Microprocessors[edit]

This list is incomplete; you can help by expanding it.

90 nm Microarchitectures[edit]

This list is incomplete; you can help by expanding it.

Documents[edit]

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