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Difference between revisions of "800 nm lithography process"
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− | {{ | + | {{lithography processes}} |
− | The '''800 nm lithography process''' was | + | The '''800 nanometer (800 nm) lithography process''' was a semiconductor manufacturing process used by a variety of [[integrated circuit]] manufacturers in the late 1980s and early 1990s. A '''"0.8 µm process"''' refers to a process which has a gate length of 0.8 µm. This process was later replaced by [[650 nm]], [[600 nm]], and [[500 nm]] processes. |
− | == | + | == Industry == |
− | + | {{scrolling table/top|style=text-align: right; | first=Fab | |
+ | |Process Name | ||
+ | |1st Production | ||
+ | |Voltage | ||
+ | |Metal Layers | ||
+ | | | ||
+ | |Gate Length | ||
+ | |Interconnect Pitch (M1P) | ||
+ | |SRAM bit cell | ||
+ | }} | ||
+ | {{scrolling table/mid}} | ||
+ | |- | ||
+ | ! [[Intel]] (BICMOS) !! colspan="2" | [[Intel]] (CHMOS V) !! [[TI]] (CMOS) !! [[TI]] (BiCMOS) !! [[Cypress]] !! [[AMD]] !! [[Motorola]] !! [[NEC]] !! [[HP]] !! [[HP]] !! [[National Semiconductor|National]] (ASIC BiCMOS) !! [[National Semiconductor|National]] (Memory BiCMOS) !! [[Hitachi]] | ||
+ | |- style="text-align: center;" | ||
+ | | || colspan="2" | P650 || || || || || || || CMOS26B || CMOS26G || ABiC IV || BiCMOS III || | ||
+ | |- style="text-align: center;" | ||
+ | | 1991 || colspan="2" | 1989 || 1991 || 1991 || 1989 || 1989 || 1991 || 1991 || 1991 || || 1990 || 1990 || | ||
+ | |- style="text-align: center;" | ||
+ | | || || || || || || || || || || || || || 5 V | ||
+ | |- | ||
+ | | || colspan="2" | 3 || 2 || 2 || 2 || || 3 || 2 || 3 || || 4 || 2 || 2 | ||
+ | |- | ||
+ | ! Value !! Value !! [[1 µm]] Δ !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value | ||
+ | |- | ||
+ | | ? nm || ? nm || ?x || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || 0.8 µm | ||
+ | |- | ||
+ | | ? nm || ? nm || ?x || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || 2.5 µm || 1.8 µm || 1.4 µm | ||
+ | |- | ||
+ | | ? µm² || 111 µm² || 0.50x || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || ? µm² || 100 µm² || ? µm² || ? µm² | ||
+ | {{scrolling table/end}} | ||
− | {{ | + | == 800 nm Microprocessors == |
− | [[ | + | * AMD |
+ | ** {{amd|80386}} | ||
+ | * Cypress | ||
+ | ** {{cypress|CY7C601}} | ||
+ | * HP | ||
+ | ** {{hp|PA-7100}} | ||
+ | * Intel | ||
+ | ** {{intel|80486}}, 1989 | ||
+ | ** {{intel|80486 DX2}} | ||
+ | ** {{intel|80486 DX4}} | ||
+ | ** {{intel|pentium (1992)|Pentium}}, 1992 | ||
+ | * MIPS | ||
+ | ** {{mips|R4000}} | ||
+ | * Motorola | ||
+ | ** {{motorola|68030}} | ||
+ | ** {{motorola|68040}} | ||
+ | * Qualcomm | ||
+ | ** {{qualcomm|MSM1}} | ||
+ | * Sun | ||
+ | ** {{sun|microSPARC I}}, 1992 | ||
+ | ** {{sun|SuperSPARC II}} | ||
+ | {{expand list}} | ||
+ | |||
+ | == 800 nm System on chips == | ||
+ | * AMD | ||
+ | ** {{amd|Am286ZX/LX}} | ||
+ | |||
+ | == 800 nm Microarchitectures == | ||
+ | * Intel | ||
+ | ** {{intel|80486|l=arch}} (later models) | ||
+ | ** {{intel|80186|l=arch}} (embedded [[IP cores]] only) | ||
+ | * ARM | ||
+ | ** {{armh|ARM6|l=arch}} | ||
+ | {{expand list}} | ||
+ | |||
+ | |||
+ | [[category:lithography]] |
Latest revision as of 22:04, 20 May 2018
The 800 nanometer (800 nm) lithography process was a semiconductor manufacturing process used by a variety of integrated circuit manufacturers in the late 1980s and early 1990s. A "0.8 µm process" refers to a process which has a gate length of 0.8 µm. This process was later replaced by 650 nm, 600 nm, and 500 nm processes.
Industry[edit]
Fab |
---|
Process Name |
1st Production |
Voltage |
Metal Layers |
|
Gate Length |
Interconnect Pitch (M1P) |
SRAM bit cell |
Intel (BICMOS) | Intel (CHMOS V) | TI (CMOS) | TI (BiCMOS) | Cypress | AMD | Motorola | NEC | HP | HP | National (ASIC BiCMOS) | National (Memory BiCMOS) | Hitachi | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
P650 | CMOS26B | CMOS26G | ABiC IV | BiCMOS III | |||||||||
1991 | 1989 | 1991 | 1991 | 1989 | 1989 | 1991 | 1991 | 1991 | 1990 | 1990 | |||
5 V | |||||||||||||
3 | 2 | 2 | 2 | 3 | 2 | 3 | 4 | 2 | 2 | ||||
Value | Value | 1 µm Δ | Value | Value | Value | Value | Value | Value | Value | Value | Value | Value | Value |
? nm | ? nm | ?x | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | 0.8 µm |
? nm | ? nm | ?x | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | ? nm | 2.5 µm | 1.8 µm | 1.4 µm |
? µm² | 111 µm² | 0.50x | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | ? µm² | 100 µm² | ? µm² | ? µm² |
800 nm Microprocessors[edit]
- AMD
- Cypress
- HP
- Intel
- MIPS
- Motorola
- Qualcomm
- Sun
- microSPARC I, 1992
- SuperSPARC II
This list is incomplete; you can help by expanding it.
800 nm System on chips[edit]
- AMD
800 nm Microarchitectures[edit]
This list is incomplete; you can help by expanding it.