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Difference between revisions of "20 nm lithography process"
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| process 1 fab = [[TSMC]] | | process 1 fab = [[TSMC]] | ||
| process 1 name = | | process 1 name = | ||
− | | process 1 date = 2014 | + | | process 1 date = 3Q 2014 |
| process 1 lith = 193 nm | | process 1 lith = 193 nm | ||
| process 1 immersion = Yes | | process 1 immersion = Yes | ||
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| process 1 dram Δ = | | process 1 dram Δ = | ||
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− | | process 2 fab = | + | | process 2 fab = [[Common Platform Alliance]] <info>The '''Common Platform Alliance''' 20 nm node was a collaboration between [[IBM]], [[Samsung]], [[GlobalFoundries]], [[Toshiba]], [[STMicroelectronics]]</info> |
| process 2 name = | | process 2 name = | ||
| process 2 date = 2014 | | process 2 date = 2014 | ||
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* MediaTek | * MediaTek | ||
** {{mediatek|Helio}} | ** {{mediatek|Helio}} | ||
+ | * Fujitsu | ||
+ | ** {{fujitsu|SPARC64}} | ||
+ | * Oracle | ||
+ | ** {{oracle|SPARC M8}} | ||
{{expand list}} | {{expand list}} | ||
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* Shang, Huiling, et al. "High performance bulk planar 20nm CMOS technology for low power mobile applications." VLSI Technology (VLSIT), 2012 Symposium on. IEEE, 2012. | * Shang, Huiling, et al. "High performance bulk planar 20nm CMOS technology for low power mobile applications." VLSI Technology (VLSIT), 2012 Symposium on. IEEE, 2012. | ||
− | [[ | + | [[category:lithography]] |
Latest revision as of 22:04, 20 May 2018
The 20 nanometer (20 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 22 nm and 16 nm processes. The term "20 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. Commercial integrated circuit manufacturing using 20 nm process began in 2014. This technology superseded by commercial 16 nm process.
Industry[edit]
Process Name | |
---|---|
1st Production | |
Lithography | Lithography |
Immersion | |
Exposure | |
Wafer | Type |
Size | |
Transistor | Type |
Voltage | |
Metal Layers | |
Gate Length (Lg) | |
Contacted Gate Pitch (CPP) | |
Minimum Metal Pitch (MMP) | |
SRAM bitcell | High-Perf (HP) |
High-Density (HD) | |
Low-Voltage (LV) | |
DRAM bitcell | eDRAM |
TSMC | Common Platform Alliance The Common Platform Alliance 20 nm node was a collaboration between IBM, Samsung, GlobalFoundries, Toshiba, STMicroelectronics
| ||
---|---|---|---|
3Q 2014 | 2014 | ||
193 nm | 193 nm | ||
Yes | Yes | ||
Bulk | Bulk | ||
300 mm | 300 mm | ||
Planar | Planar | ||
0.95 V | 0.9 V | ||
10 | |||
Value | 28 nm Δ | Value | 28 nm Δ |
20 nm | 0.67x | ||
90 nm | 0.77x | 86 nm | 0.76 |
64 nm | 0.67x | 64 nm | 0.71x |
0.102 µm² | |||
0.081 µm² | 0.64x | 0.081 µm² | 0.68x |
TSMC[edit]
TSMC demonstrated their 112 Mebibit SRAM wafer from their 20 nm HKMG process at the 2013 IEEE ISSCC.
20 nm Microprocessors[edit]
This list is incomplete; you can help by expanding it.
20 nm Microarchitectures[edit]
This list is incomplete; you can help by expanding it.
References[edit]
- Chang, Jonathan, et al. "A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-V MIN applications." Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International. IEEE, 2013.
- Shang, Huiling, et al. "High performance bulk planar 20nm CMOS technology for low power mobile applications." VLSI Technology (VLSIT), 2012 Symposium on. IEEE, 2012.