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    Difference between revisions of "28 nm lithography process"    
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  | process 1 fab          = [[TSMC]]  |   | process 1 fab          = [[TSMC]]  | ||
  | process 1 name         = 28LP, 28HPL, 28HP  |   | process 1 name         = 28LP, 28HPL, 28HP  | ||
| − |   | process 1 date         =   | + |   | process 1 date         = 4Q 2011  | 
  | process 1 lith         = 193 nm  |   | process 1 lith         = 193 nm  | ||
  | process 1 immersion    = Yes  |   | process 1 immersion    = Yes  | ||
Revision as of 12:16, 5 August 2017
The 28 nanometer (28 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.
Industry
| Process Name | |
|---|---|
| 1st Production | |
|  Litho- graphy  | 
Lithography | 
| Immersion | |
| Exposure | |
| Wafer | Type | 
| Size | |
|  Tran- sistor  | 
Type | 
| Voltage | |
| Metal Layers | |
| Gate Length (Lg) | |
| Contacted Gate Pitch (CPP) | |
| Minimum Metal Pitch (MMP) | |
|  SRAM  bitcell  | 
High-Perf (HP) | 
| High-Density (HD) | |
| Low-Voltage (LV) | |
|  DRAM  bitcell  | 
eDRAM | 
| TSMC |  Common Platform Alliance  The Common Platform Alliance is a joint collaboration between IBM, Samsung, GlobalFoundries, Toshiba, NEC, STMicroelectronics, Infineon Technologies, Chartered Semiconductor Manufacturing, Renasas  | 
UMC | |||
|---|---|---|---|---|---|
| 28LP, 28HPL, 28HP | 28LP, 28LPP, 28SLP | 28HPC, 28HLP, 28HPC+, 28µLP | |||
| 4Q 2011 | 2014 | 2013 | |||
| 193 nm | 193 nm | 193 nm | |||
| Yes | Yes | Yes | |||
| DP | DP | DP | |||
| Bulk | Bulk | Bulk | |||
| 300 mm | 300 mm | 300 mm | |||
| Planar | Planar | Planar | |||
| 1 V, 0.8 V | 1 V, 0.85 V | 0.9 V, 1.05 V, 0.7 V | |||
| 10 | 10 | 10 | |||
| Value | 32 nm Δ | Value | 32 nm Δ | Value | 40 nm Δ | 
| 24 nm | 28 nm | 33 nm | |||
| 117 nm | 113.4 nm | 120 nm | |||
| 90 nm | 90 nm | 90 nm | |||
| 0.152 µm² | |||||
| 0.127 µm² | 0.120 µm² | 0.124 µm² | |||
| 0.155 µm² | 0.197 µm² | ||||
28 nm Microprocessors
- AMD
 - Intel (Fab'ed by TSMC)
 - MediaTek
 - Phytium
 - PEZY
 - Renesas
 - Xiaomi
 
This list is incomplete; you can help by expanding it.
28 nm Microarchitectures
- AMD
 - ARM Holdings
 - Phytium
 
This list is incomplete; you can help by expanding it.
References
- Samsung foundry solution for 32 & 28 nm
 - Wu, Shien-Yang, et al. "A highly manufacturable 28nm cmos low power platform technology with fully functional 64mb sram using dual/tripe gate oxide process." VLSI Technology, 2009 Symposium on. IEEE, 2009.
 - Shang, Huiling, et al. "High performance bulk planar 20nm CMOS technology for low power mobile applications." VLSI Technology (VLSIT), 2012 Symposium on. IEEE, 2012.
 - Arnaud, F., et al. "Competitive and cost effective high-k based 28nm CMOS technology for low power applications." Electron Devices Meeting (IEDM), 2009 IEEE International. IEEE, 2009.
 - Yuan, J., et al. "Performance elements for 28nm gate length bulk devices with gate first high-k metal gate." Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on. IEEE, 2010.
 - Liang, C. W., et al. "A 28nm poly/SiON CMOS technology for low-power SoC applications." VLSI Technology (VLSIT), 2011 Symposium on. IEEE, 2011.
 - James, Dick. "High-k/metal gates in the 2010s." Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI. IEEE, 2014.