From WikiChip
Difference between revisions of "28 nm lithography process"
Line 37: | Line 37: | ||
* Intel (Fab'ed by [[TSMC]]) | * Intel (Fab'ed by [[TSMC]]) | ||
** {{intel|Atom x3}} | ** {{intel|Atom x3}} | ||
+ | * MediaTek | ||
+ | ** {{mediatek|Helio}} | ||
* Phytium | * Phytium | ||
** {{phytium|FT-1500A}} | ** {{phytium|FT-1500A}} | ||
Line 49: | Line 51: | ||
** {{amd|microarchitectures/steamroller|Steamroller}} | ** {{amd|microarchitectures/steamroller|Steamroller}} | ||
** {{amd|microarchitectures/excavator|Excavator}} | ** {{amd|microarchitectures/excavator|Excavator}} | ||
+ | * ARM Holdings | ||
+ | ** {{armh|Cortex-A53|l=arch}} | ||
{{expand list}} | {{expand list}} |
Revision as of 02:46, 4 December 2016
The 28 nanometer (28 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.
Industry
Fab |
---|
Wafer |
|
Contacted Gate Pitch |
Interconnect Pitch (M1P) |
SRAM bit cell (HD) |
SRAM bit cell (LP) |
SRAM bit cell (HC) |
Samsung | TSMC | GlobalFoundries | STMicroelectronics | UMC | |||||
---|---|---|---|---|---|---|---|---|---|
300mm | |||||||||
Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ |
90 nm | 0.70x | 117 nm | 0.72x | ?nm | ?x | ?nm | ?x | ?nm | ?x |
96 nm | 0.82x | ?nm | ?x | ?nm | ?x | ?nm | ?x | ?nm | ?x |
0.120 µm2 | ?x | 0.127 µm2 | 0.52x | 0.120 µm2 | ?x | 0.120 µm2 | ?x | 0.124 µm2 | ?x |
0.155 µm2 | 0.197 µm2 | ?x | ? µm2 | ?x | |||||
0.152 µm2 | ?x |
28 nm Microprocessors
This list is incomplete; you can help by expanding it.
28 nm Microarchitectures
- AMD
- ARM Holdings
This list is incomplete; you can help by expanding it.