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Difference between revisions of "28 nm lithography process"
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− | ! colspan="2" | [[Samsung]] !! colspan="2" | [[TSMC]] | + | ! colspan="2" | [[Samsung]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[GlobalFoundries]] |
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− | ! Value !! [[40 nm]] Δ !! Value !! [[40 nm]] Δ | + | ! Value !! [[40 nm]] Δ !! Value !! [[40 nm]] Δ !! Value !! [[40 nm]] Δ |
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− | | 90 nm || 0.70x || 117 nm || 0.72x | + | | 90 nm || 0.70x || 117 nm || 0.72x || ?nm || ?x |
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− | | 96 nm || 0.82x || ?nm || ?x | + | | 96 nm || 0.82x || ?nm || ?x || ?nm || ?x |
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− | | 0.120 µm<sup>2</sup> || ?x || 0.127 µm<sup>2</sup> || 0.52x | + | | 0.120 µm<sup>2</sup> || ?x || 0.127 µm<sup>2</sup> || 0.52x || 0.120 µm<sup>2</sup> || ?x |
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− | | || || 0.155 µm<sup>2</sup> || | + | | || || 0.155 µm<sup>2</sup> || || || |
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Revision as of 21:33, 25 April 2016
The 28 nm lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.
Industry
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Contacted Gate Pitch |
Interconnect Pitch (M1P) |
SRAM bit cell (HD) |
SRAM bit cell (LP) |
Samsung | TSMC | GlobalFoundries | |||
---|---|---|---|---|---|
Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ |
90 nm | 0.70x | 117 nm | 0.72x | ?nm | ?x |
96 nm | 0.82x | ?nm | ?x | ?nm | ?x |
0.120 µm2 | ?x | 0.127 µm2 | 0.52x | 0.120 µm2 | ?x |
0.155 µm2 |
28 nm Microprocessors
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28 nm System on Chips
- Intel
This list is incomplete; you can help by expanding it.